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Photoinduced absorption of THz radiation in semi-insulating GaAs crystal. / Kurdyubov, A. S.; Trifonov, A. V.; Gerlovin, I. Ya; Ignatiev, I. V.; Kavokin, A. V.

In: Physics of the Solid State, Vol. 59, No. 7, 01.07.2017, p. 1298-1301.

Research output: Contribution to journal › Article › peer-review

Harvard

Kurdyubov, AS, Trifonov, AV, Gerlovin, IY, Ignatiev, IV & Kavokin, AV 2017, 'Photoinduced absorption of THz radiation in semi-insulating GaAs crystal', Physics of the Solid State, vol. 59, no. 7, pp. 1298-1301. https://doi.org/10.1134/S1063783417070125

APA

Kurdyubov, A. S., Trifonov, A. V., Gerlovin, I. Y., Ignatiev, I. V., & Kavokin, A. V. (2017). Photoinduced absorption of THz radiation in semi-insulating GaAs crystal. Physics of the Solid State, 59(7), 1298-1301. https://doi.org/10.1134/S1063783417070125

Vancouver

Kurdyubov AS, Trifonov AV, Gerlovin IY, Ignatiev IV, Kavokin AV. Photoinduced absorption of THz radiation in semi-insulating GaAs crystal. Physics of the Solid State. 2017 Jul 1;59(7):1298-1301. https://doi.org/10.1134/S1063783417070125

Author

Kurdyubov, A. S. ; Trifonov, A. V. ; Gerlovin, I. Ya ; Ignatiev, I. V. ; Kavokin, A. V. / Photoinduced absorption of THz radiation in semi-insulating GaAs crystal. In: Physics of the Solid State. 2017 ; Vol. 59, No. 7. pp. 1298-1301.

BibTeX

@article{0d24038ff9ee4d47bf8c463c99328032,
title = "Photoinduced absorption of THz radiation in semi-insulating GaAs crystal",
abstract = "The influence of optical illumination on transmission of THz radiation through a bulk crystal of semi-insulating GaAs is experimentally studied. It is established that, without additional illumination, absorption of electromagnetic waves with a frequency of about 1 THz in the studied crystal is almost absent. Optical illumination in the spectral range of fundamental absorption of the crystal does not affect the transmission of THz waves. At the same time, if the illumination photon energy is a little below the edge of fundamental absorption, i.e., actually in the transparency region, the transmission of THz radiation drops sharply. At liquid helium temperature, the maximum effect is achieved for the energy of optical photons lower by approximately 30 meV than the crystal band gap. Further shift of the illumination toward lower photon energies is accompanied by almost complete recovery of the transmission. With increasing sample temperature, the spectral range of efficient action of the illumination shifts together with the edge of fundamental absorption toward lower photon energies.",
author = "Kurdyubov, {A. S.} and Trifonov, {A. V.} and Gerlovin, {I. Ya} and Ignatiev, {I. V.} and Kavokin, {A. V.}",
year = "2017",
month = jul,
day = "1",
doi = "10.1134/S1063783417070125",
language = "English",
volume = "59",
pages = "1298--1301",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "7",

}

RIS

TY - JOUR

T1 - Photoinduced absorption of THz radiation in semi-insulating GaAs crystal

AU - Kurdyubov, A. S.

AU - Trifonov, A. V.

AU - Gerlovin, I. Ya

AU - Ignatiev, I. V.

AU - Kavokin, A. V.

PY - 2017/7/1

Y1 - 2017/7/1

N2 - The influence of optical illumination on transmission of THz radiation through a bulk crystal of semi-insulating GaAs is experimentally studied. It is established that, without additional illumination, absorption of electromagnetic waves with a frequency of about 1 THz in the studied crystal is almost absent. Optical illumination in the spectral range of fundamental absorption of the crystal does not affect the transmission of THz waves. At the same time, if the illumination photon energy is a little below the edge of fundamental absorption, i.e., actually in the transparency region, the transmission of THz radiation drops sharply. At liquid helium temperature, the maximum effect is achieved for the energy of optical photons lower by approximately 30 meV than the crystal band gap. Further shift of the illumination toward lower photon energies is accompanied by almost complete recovery of the transmission. With increasing sample temperature, the spectral range of efficient action of the illumination shifts together with the edge of fundamental absorption toward lower photon energies.

AB - The influence of optical illumination on transmission of THz radiation through a bulk crystal of semi-insulating GaAs is experimentally studied. It is established that, without additional illumination, absorption of electromagnetic waves with a frequency of about 1 THz in the studied crystal is almost absent. Optical illumination in the spectral range of fundamental absorption of the crystal does not affect the transmission of THz waves. At the same time, if the illumination photon energy is a little below the edge of fundamental absorption, i.e., actually in the transparency region, the transmission of THz radiation drops sharply. At liquid helium temperature, the maximum effect is achieved for the energy of optical photons lower by approximately 30 meV than the crystal band gap. Further shift of the illumination toward lower photon energies is accompanied by almost complete recovery of the transmission. With increasing sample temperature, the spectral range of efficient action of the illumination shifts together with the edge of fundamental absorption toward lower photon energies.

UR - http://www.scopus.com/inward/record.url?scp=85023746844&partnerID=8YFLogxK

U2 - 10.1134/S1063783417070125

DO - 10.1134/S1063783417070125

M3 - Article

AN - SCOPUS:85023746844

VL - 59

SP - 1298

EP - 1301

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 7

ER -

ID: 8911198