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Phonon-induced linewidth of quantum-well states in monolayer Pb on Si(111). / Sklyadneva, I. Yu; Heid, R.; Bohnen, K. P.; Chulkov, E. V.

In: Surface Science, Vol. 678, 01.12.2018, p. 86-90.

Research output: Contribution to journal › Article › peer-review

Harvard

Sklyadneva, IY, Heid, R, Bohnen, KP & Chulkov, EV 2018, 'Phonon-induced linewidth of quantum-well states in monolayer Pb on Si(111)', Surface Science, vol. 678, pp. 86-90. https://doi.org/10.1016/j.susc.2018.01.012

APA

Sklyadneva, I. Y., Heid, R., Bohnen, K. P., & Chulkov, E. V. (2018). Phonon-induced linewidth of quantum-well states in monolayer Pb on Si(111). Surface Science, 678, 86-90. https://doi.org/10.1016/j.susc.2018.01.012

Vancouver

Sklyadneva IY, Heid R, Bohnen KP, Chulkov EV. Phonon-induced linewidth of quantum-well states in monolayer Pb on Si(111). Surface Science. 2018 Dec 1;678:86-90. https://doi.org/10.1016/j.susc.2018.01.012

Author

Sklyadneva, I. Yu ; Heid, R. ; Bohnen, K. P. ; Chulkov, E. V. / Phonon-induced linewidth of quantum-well states in monolayer Pb on Si(111). In: Surface Science. 2018 ; Vol. 678. pp. 86-90.

BibTeX

@article{07924d1439544fc8aad38de11df7eda0,
title = "Phonon-induced linewidth of quantum-well states in monolayer Pb on Si(111)",
abstract = "We report a study of the electron–phonon contribution to the linewidth of quantum-well states in a surface superstructure formed by a 4/3-monolayer of Pb on Si(111), a dense phase with a 3×3 unit cell. Ab initio calculations based on the density-functional theory were carried out using a linear response approach in the mixed-basis pseudopotential representation. The phonon-induced contribution to the lifetime broadening is analyzed for both excited electrons and holes. The phonon contribution is found to be generally very sensitive to the energy position of the excited electron (hole) except for unoccupied Pb electronic states inside the Si band gap where the phonon-induced linewidth varies smoothly around ∼ 13 meV irrespective of electron energy. This differs for occupied Pb electronic states, which exhibit larger linewidths, or shorter lifetimes, because numerous phonon-mediated transitions to Si electronic bands substantially increase the electron–phonon coupling.",
keywords = "Electron–phonon coupling, Lead overlayer on Si(111), Lifetime, Quantum-well states, Electron-phonon coupling, DYNAMICS, ELECTRONIC EXCITATIONS, METAL-FILMS",
author = "Sklyadneva, {I. Yu} and R. Heid and Bohnen, {K. P.} and Chulkov, {E. V.}",
year = "2018",
month = dec,
day = "1",
doi = "10.1016/j.susc.2018.01.012",
language = "English",
volume = "678",
pages = "86--90",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Phonon-induced linewidth of quantum-well states in monolayer Pb on Si(111)

AU - Sklyadneva, I. Yu

AU - Heid, R.

AU - Bohnen, K. P.

AU - Chulkov, E. V.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - We report a study of the electron–phonon contribution to the linewidth of quantum-well states in a surface superstructure formed by a 4/3-monolayer of Pb on Si(111), a dense phase with a 3×3 unit cell. Ab initio calculations based on the density-functional theory were carried out using a linear response approach in the mixed-basis pseudopotential representation. The phonon-induced contribution to the lifetime broadening is analyzed for both excited electrons and holes. The phonon contribution is found to be generally very sensitive to the energy position of the excited electron (hole) except for unoccupied Pb electronic states inside the Si band gap where the phonon-induced linewidth varies smoothly around ∼ 13 meV irrespective of electron energy. This differs for occupied Pb electronic states, which exhibit larger linewidths, or shorter lifetimes, because numerous phonon-mediated transitions to Si electronic bands substantially increase the electron–phonon coupling.

AB - We report a study of the electron–phonon contribution to the linewidth of quantum-well states in a surface superstructure formed by a 4/3-monolayer of Pb on Si(111), a dense phase with a 3×3 unit cell. Ab initio calculations based on the density-functional theory were carried out using a linear response approach in the mixed-basis pseudopotential representation. The phonon-induced contribution to the lifetime broadening is analyzed for both excited electrons and holes. The phonon contribution is found to be generally very sensitive to the energy position of the excited electron (hole) except for unoccupied Pb electronic states inside the Si band gap where the phonon-induced linewidth varies smoothly around ∼ 13 meV irrespective of electron energy. This differs for occupied Pb electronic states, which exhibit larger linewidths, or shorter lifetimes, because numerous phonon-mediated transitions to Si electronic bands substantially increase the electron–phonon coupling.

KW - Electron–phonon coupling

KW - Lead overlayer on Si(111)

KW - Lifetime

KW - Quantum-well states

KW - Electron-phonon coupling

KW - DYNAMICS

KW - ELECTRONIC EXCITATIONS

KW - METAL-FILMS

UR - http://www.scopus.com/inward/record.url?scp=85041596412&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2018.01.012

DO - 10.1016/j.susc.2018.01.012

M3 - Article

AN - SCOPUS:85041596412

VL - 678

SP - 86

EP - 90

JO - Surface Science

JF - Surface Science

SN - 0039-6028

ER -

ID: 36281720