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Phonon wind and drag of excitons in monolayer semiconductors. / Glazov, M. M.

In: Physical Review B, Vol. 100, No. 4, 045426, 30.07.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Glazov, MM 2019, 'Phonon wind and drag of excitons in monolayer semiconductors', Physical Review B, vol. 100, no. 4, 045426. https://doi.org/10.1103/PhysRevB.100.045426

APA

Glazov, M. M. (2019). Phonon wind and drag of excitons in monolayer semiconductors. Physical Review B, 100(4), [045426]. https://doi.org/10.1103/PhysRevB.100.045426

Vancouver

Glazov MM. Phonon wind and drag of excitons in monolayer semiconductors. Physical Review B. 2019 Jul 30;100(4). 045426. https://doi.org/10.1103/PhysRevB.100.045426

Author

Glazov, M. M. / Phonon wind and drag of excitons in monolayer semiconductors. In: Physical Review B. 2019 ; Vol. 100, No. 4.

BibTeX

@article{36d59f9f7f4b4bfd9be1febdd14de76b,
title = "Phonon wind and drag of excitons in monolayer semiconductors",
abstract = "We study theoretically the nonequilibrium exciton transport in monolayer transition metal dichalcogenides. We consider the situation where excitons interact with nonequilibrium phonons, e.g., under the conditions of localized excitation where a {"}hot spot{"} is formed. We develop the theory of the exciton drag by the phonons and analyze in detail the regimes of diffusive propagation of phonons and ballistic propagation of phonons where the phonon wind is generated. We demonstrate that a halolike spatial distribution of excitons akin observed in [Phys. Rev. Lett. 120, 207401 (2018)PRLTAO0031-900710.1103/PhysRevLett.120.207401] can result from the exciton drag by nonequilibrium phonons.",
keywords = "TRANSPORT",
author = "Glazov, {M. M.}",
year = "2019",
month = jul,
day = "30",
doi = "10.1103/PhysRevB.100.045426",
language = "English",
volume = "100",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "4",

}

RIS

TY - JOUR

T1 - Phonon wind and drag of excitons in monolayer semiconductors

AU - Glazov, M. M.

PY - 2019/7/30

Y1 - 2019/7/30

N2 - We study theoretically the nonequilibrium exciton transport in monolayer transition metal dichalcogenides. We consider the situation where excitons interact with nonequilibrium phonons, e.g., under the conditions of localized excitation where a "hot spot" is formed. We develop the theory of the exciton drag by the phonons and analyze in detail the regimes of diffusive propagation of phonons and ballistic propagation of phonons where the phonon wind is generated. We demonstrate that a halolike spatial distribution of excitons akin observed in [Phys. Rev. Lett. 120, 207401 (2018)PRLTAO0031-900710.1103/PhysRevLett.120.207401] can result from the exciton drag by nonequilibrium phonons.

AB - We study theoretically the nonequilibrium exciton transport in monolayer transition metal dichalcogenides. We consider the situation where excitons interact with nonequilibrium phonons, e.g., under the conditions of localized excitation where a "hot spot" is formed. We develop the theory of the exciton drag by the phonons and analyze in detail the regimes of diffusive propagation of phonons and ballistic propagation of phonons where the phonon wind is generated. We demonstrate that a halolike spatial distribution of excitons akin observed in [Phys. Rev. Lett. 120, 207401 (2018)PRLTAO0031-900710.1103/PhysRevLett.120.207401] can result from the exciton drag by nonequilibrium phonons.

KW - TRANSPORT

UR - http://www.scopus.com/inward/record.url?scp=85070480062&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.100.045426

DO - 10.1103/PhysRevB.100.045426

M3 - Article

AN - SCOPUS:85070480062

VL - 100

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 4

M1 - 045426

ER -

ID: 49044396