• V. Yu Davydov
  • Yu E. Kitaev
  • I. N. Goncharuk
  • A. M. Tsaregorodtsev
  • A. N. Smirnov
  • A. O. Lebedev
  • V. M. Botnaryk
  • Yu V. Zhilyaev
  • M. B. Smirnov
  • A. P. Mirgorodsky
  • O. K. Semchinova

We present the results of a detailed study of the first and second-order Raman scattering in wurtzite GaN and AlN at room and liquid helium temperatures. A complete group-theory analysis of phonon symmetry and optical selection rules permitted us to assign the observed features in the second-order Raman spectra to combinations of phonons at the Γ, K, and M points of the Brillouin zone. The joint treatment of these results with lattice dynamical calculations based on phenomenological interatomic potential model allowed us to obtain the reliable data on phonon dispersion curves in bulk GaN and AlN.

Original languageEnglish
Pages (from-to)656-660
Number of pages5
JournalJournal of Crystal Growth
Volume189-190
DOIs
StatePublished - 15 Jun 1998

    Research areas

  • Crystal structure and symmetry, Inelastic light scattering, Phonons, Semiconductors

    Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

ID: 38808678