Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field. / Ignatiev, Ivan V.; Kozin, Igor E.; Davydov, Valentin G.; Nair, Selvakumar V.; Lee, Jeong-Sik; Ren, Hong-Wen; Sugou, Shigeo; Masumoto, Yasuaki.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 63, No. 7, 2001, p. 075316-1-11.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field
AU - Ignatiev, Ivan V.
AU - Kozin, Igor E.
AU - Davydov, Valentin G.
AU - Nair, Selvakumar V.
AU - Lee, Jeong-Sik
AU - Ren, Hong-Wen
AU - Sugou, Shigeo
AU - Masumoto, Yasuaki
PY - 2001
Y1 - 2001
N2 - Phonon resonances observed in the photoluminescence ~PL! spectra of InP and In0 . 3 5Ga0 . 6 5As selfassembled quantum dots ~QD’s! in an external electric field are studied in detail. The resonances are shown to arise from fast phonon-assisted relaxation of hot carriers, and to become observable when the PL is quenched by nonradiative losses from excited states. A simple model is developed that considers tunneling of the carriers from the QD’s into the barrier layer as the main process responsible for PL quenching in the presence of an electric field. From this model, the depth of the potential well for holes is estimated to be 10–20 meV for the InP QD’s. The PL kinetics measurement is performed with a time resolution of 6 ps. Clear evidence of surprisingly fast carrier relaxation with emission of high-energy acoustic phonons is found. Further acceleration of the carrier relaxation is observed under strong optical pumping. We consider this effect to be caused by Auger-like carrier-carrier scattering processes.
AB - Phonon resonances observed in the photoluminescence ~PL! spectra of InP and In0 . 3 5Ga0 . 6 5As selfassembled quantum dots ~QD’s! in an external electric field are studied in detail. The resonances are shown to arise from fast phonon-assisted relaxation of hot carriers, and to become observable when the PL is quenched by nonradiative losses from excited states. A simple model is developed that considers tunneling of the carriers from the QD’s into the barrier layer as the main process responsible for PL quenching in the presence of an electric field. From this model, the depth of the potential well for holes is estimated to be 10–20 meV for the InP QD’s. The PL kinetics measurement is performed with a time resolution of 6 ps. Clear evidence of surprisingly fast carrier relaxation with emission of high-energy acoustic phonons is found. Further acceleration of the carrier relaxation is observed under strong optical pumping. We consider this effect to be caused by Auger-like carrier-carrier scattering processes.
M3 - статья
VL - 63
SP - 075316-1-11
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 7
ER -
ID: 5327610