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Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field. / Ignatiev, Ivan V.; Kozin, Igor E.; Davydov, Valentin G.; Nair, Selvakumar V.; Lee, Jeong-Sik; Ren, Hong-Wen; Sugou, Shigeo; Masumoto, Yasuaki.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 63, No. 7, 2001, p. 075316-1-11.

Research output: Contribution to journal › Article

Harvard

Ignatiev, IV, Kozin, IE, Davydov, VG, Nair, SV, Lee, J-S, Ren, H-W, Sugou, S & Masumoto, Y 2001, 'Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field', Physical Review B - Condensed Matter and Materials Physics, vol. 63, no. 7, pp. 075316-1-11.

APA

Ignatiev, I. V., Kozin, I. E., Davydov, V. G., Nair, S. V., Lee, J-S., Ren, H-W., Sugou, S., & Masumoto, Y. (2001). Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field. Physical Review B - Condensed Matter and Materials Physics, 63(7), 075316-1-11.

Vancouver

Ignatiev IV, Kozin IE, Davydov VG, Nair SV, Lee J-S, Ren H-W et al. Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field. Physical Review B - Condensed Matter and Materials Physics. 2001;63(7):075316-1-11.

Author

Ignatiev, Ivan V. ; Kozin, Igor E. ; Davydov, Valentin G. ; Nair, Selvakumar V. ; Lee, Jeong-Sik ; Ren, Hong-Wen ; Sugou, Shigeo ; Masumoto, Yasuaki. / Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field. In: Physical Review B - Condensed Matter and Materials Physics. 2001 ; Vol. 63, No. 7. pp. 075316-1-11.

BibTeX

@article{1853a53a014d458db3f0412e07b56504,
title = "Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field",
abstract = "Phonon resonances observed in the photoluminescence ~PL! spectra of InP and In0 . 3 5Ga0 . 6 5As selfassembled quantum dots ~QD{\textquoteright}s! in an external electric field are studied in detail. The resonances are shown to arise from fast phonon-assisted relaxation of hot carriers, and to become observable when the PL is quenched by nonradiative losses from excited states. A simple model is developed that considers tunneling of the carriers from the QD{\textquoteright}s into the barrier layer as the main process responsible for PL quenching in the presence of an electric field. From this model, the depth of the potential well for holes is estimated to be 10–20 meV for the InP QD{\textquoteright}s. The PL kinetics measurement is performed with a time resolution of 6 ps. Clear evidence of surprisingly fast carrier relaxation with emission of high-energy acoustic phonons is found. Further acceleration of the carrier relaxation is observed under strong optical pumping. We consider this effect to be caused by Auger-like carrier-carrier scattering processes.",
author = "Ignatiev, {Ivan V.} and Kozin, {Igor E.} and Davydov, {Valentin G.} and Nair, {Selvakumar V.} and Jeong-Sik Lee and Hong-Wen Ren and Shigeo Sugou and Yasuaki Masumoto",
year = "2001",
language = "не определен",
volume = "63",
pages = "075316--1--11",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "7",

}

RIS

TY - JOUR

T1 - Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field

AU - Ignatiev, Ivan V.

AU - Kozin, Igor E.

AU - Davydov, Valentin G.

AU - Nair, Selvakumar V.

AU - Lee, Jeong-Sik

AU - Ren, Hong-Wen

AU - Sugou, Shigeo

AU - Masumoto, Yasuaki

PY - 2001

Y1 - 2001

N2 - Phonon resonances observed in the photoluminescence ~PL! spectra of InP and In0 . 3 5Ga0 . 6 5As selfassembled quantum dots ~QD’s! in an external electric field are studied in detail. The resonances are shown to arise from fast phonon-assisted relaxation of hot carriers, and to become observable when the PL is quenched by nonradiative losses from excited states. A simple model is developed that considers tunneling of the carriers from the QD’s into the barrier layer as the main process responsible for PL quenching in the presence of an electric field. From this model, the depth of the potential well for holes is estimated to be 10–20 meV for the InP QD’s. The PL kinetics measurement is performed with a time resolution of 6 ps. Clear evidence of surprisingly fast carrier relaxation with emission of high-energy acoustic phonons is found. Further acceleration of the carrier relaxation is observed under strong optical pumping. We consider this effect to be caused by Auger-like carrier-carrier scattering processes.

AB - Phonon resonances observed in the photoluminescence ~PL! spectra of InP and In0 . 3 5Ga0 . 6 5As selfassembled quantum dots ~QD’s! in an external electric field are studied in detail. The resonances are shown to arise from fast phonon-assisted relaxation of hot carriers, and to become observable when the PL is quenched by nonradiative losses from excited states. A simple model is developed that considers tunneling of the carriers from the QD’s into the barrier layer as the main process responsible for PL quenching in the presence of an electric field. From this model, the depth of the potential well for holes is estimated to be 10–20 meV for the InP QD’s. The PL kinetics measurement is performed with a time resolution of 6 ps. Clear evidence of surprisingly fast carrier relaxation with emission of high-energy acoustic phonons is found. Further acceleration of the carrier relaxation is observed under strong optical pumping. We consider this effect to be caused by Auger-like carrier-carrier scattering processes.

M3 - статья

VL - 63

SP - 075316-1-11

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 7

ER -

ID: 5327610