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Peculiarity of Electric Properties of Oxygen-Implanted Silicon at Early Precipitation Stages. / Danilov, Denis; Vyvenko, Oleg; Loshachenko, Anton; Sobolev, Nikolay.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 216, No. 17, 1900327, 09.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Danilov, D, Vyvenko, O, Loshachenko, A & Sobolev, N 2019, 'Peculiarity of Electric Properties of Oxygen-Implanted Silicon at Early Precipitation Stages', Physica Status Solidi (A) Applications and Materials Science, vol. 216, no. 17, 1900327. https://doi.org/10.1002/pssa.201900327

APA

Danilov, D., Vyvenko, O., Loshachenko, A., & Sobolev, N. (2019). Peculiarity of Electric Properties of Oxygen-Implanted Silicon at Early Precipitation Stages. Physica Status Solidi (A) Applications and Materials Science, 216(17), [1900327]. https://doi.org/10.1002/pssa.201900327

Vancouver

Danilov D, Vyvenko O, Loshachenko A, Sobolev N. Peculiarity of Electric Properties of Oxygen-Implanted Silicon at Early Precipitation Stages. Physica Status Solidi (A) Applications and Materials Science. 2019 Sep;216(17). 1900327. https://doi.org/10.1002/pssa.201900327

Author

Danilov, Denis ; Vyvenko, Oleg ; Loshachenko, Anton ; Sobolev, Nikolay. / Peculiarity of Electric Properties of Oxygen-Implanted Silicon at Early Precipitation Stages. In: Physica Status Solidi (A) Applications and Materials Science. 2019 ; Vol. 216, No. 17.

BibTeX

@article{5fb55b3d710444d99a8a2acf66e40cf6,
title = "Peculiarity of Electric Properties of Oxygen-Implanted Silicon at Early Precipitation Stages",
abstract = "The evolution of the defect structure and electric properties of the oxygen-implanted silicon samples subjected by thermal treatment in the temperature range from 700 to 1100 °C is investigated using transmission electron microscopy (TEM) and space charge spectroscopy. It is established that embedded positive charge of oxygen precipitates (OPs) decreases inversely proportional to their size. This fact gives evidence about localization of the charge in thin nonstoichiometric shell of OP. Annealing at 700 °C results in the formation of nanosized defects and in an inhomogeneous electric structure of the implanted region: the embedded positive charge is localized in the near-surface vacancy-rich part of the implanted region, whereas the strongly compensated layer is formed in self-interstitial-rich deepest part of the implanted region.",
keywords = "embedded charge, ion implantation, oxygen precipitates, silicon, DEFECTS, DISLOCATIONS, STATES, PHOTOLUMINESCENCE, SPECTROSCOPY, SIGNATURES, SI",
author = "Denis Danilov and Oleg Vyvenko and Anton Loshachenko and Nikolay Sobolev",
year = "2019",
month = sep,
doi = "10.1002/pssa.201900327",
language = "English",
volume = "216",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-Blackwell",
number = "17",

}

RIS

TY - JOUR

T1 - Peculiarity of Electric Properties of Oxygen-Implanted Silicon at Early Precipitation Stages

AU - Danilov, Denis

AU - Vyvenko, Oleg

AU - Loshachenko, Anton

AU - Sobolev, Nikolay

PY - 2019/9

Y1 - 2019/9

N2 - The evolution of the defect structure and electric properties of the oxygen-implanted silicon samples subjected by thermal treatment in the temperature range from 700 to 1100 °C is investigated using transmission electron microscopy (TEM) and space charge spectroscopy. It is established that embedded positive charge of oxygen precipitates (OPs) decreases inversely proportional to their size. This fact gives evidence about localization of the charge in thin nonstoichiometric shell of OP. Annealing at 700 °C results in the formation of nanosized defects and in an inhomogeneous electric structure of the implanted region: the embedded positive charge is localized in the near-surface vacancy-rich part of the implanted region, whereas the strongly compensated layer is formed in self-interstitial-rich deepest part of the implanted region.

AB - The evolution of the defect structure and electric properties of the oxygen-implanted silicon samples subjected by thermal treatment in the temperature range from 700 to 1100 °C is investigated using transmission electron microscopy (TEM) and space charge spectroscopy. It is established that embedded positive charge of oxygen precipitates (OPs) decreases inversely proportional to their size. This fact gives evidence about localization of the charge in thin nonstoichiometric shell of OP. Annealing at 700 °C results in the formation of nanosized defects and in an inhomogeneous electric structure of the implanted region: the embedded positive charge is localized in the near-surface vacancy-rich part of the implanted region, whereas the strongly compensated layer is formed in self-interstitial-rich deepest part of the implanted region.

KW - embedded charge

KW - ion implantation

KW - oxygen precipitates

KW - silicon

KW - DEFECTS

KW - DISLOCATIONS

KW - STATES

KW - PHOTOLUMINESCENCE

KW - SPECTROSCOPY

KW - SIGNATURES

KW - SI

UR - http://www.scopus.com/inward/record.url?scp=85069858980&partnerID=8YFLogxK

UR - http://www.mendeley.com/research/peculiarity-electric-properties-oxygenimplanted-silicon-early-precipitation-stages

U2 - 10.1002/pssa.201900327

DO - 10.1002/pssa.201900327

M3 - Article

AN - SCOPUS:85069858980

VL - 216

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 17

M1 - 1900327

ER -

ID: 45984654