Standard

Oxygen-related defects : Minority carrier lifetime killers in n-type Czochralski silicon wafers for solar cell application. / Kolevatov, I.; Osinniy, V.; Herms, M.; Loshachenko, A.; Shlyakhov, I.; Kveder, V.; Vyvenko, O.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 12, No. 8, 01.08.2015, p. 1108-1110.

Research output: Contribution to journal › Article › peer-review

Harvard

Kolevatov, I, Osinniy, V, Herms, M, Loshachenko, A, Shlyakhov, I, Kveder, V & Vyvenko, O 2015, 'Oxygen-related defects: Minority carrier lifetime killers in n-type Czochralski silicon wafers for solar cell application', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 12, no. 8, pp. 1108-1110. https://doi.org/10.1002/pssc.201400293

APA

Kolevatov, I., Osinniy, V., Herms, M., Loshachenko, A., Shlyakhov, I., Kveder, V., & Vyvenko, O. (2015). Oxygen-related defects: Minority carrier lifetime killers in n-type Czochralski silicon wafers for solar cell application. Physica Status Solidi (C) Current Topics in Solid State Physics, 12(8), 1108-1110. https://doi.org/10.1002/pssc.201400293

Vancouver

Kolevatov I, Osinniy V, Herms M, Loshachenko A, Shlyakhov I, Kveder V et al. Oxygen-related defects: Minority carrier lifetime killers in n-type Czochralski silicon wafers for solar cell application. Physica Status Solidi (C) Current Topics in Solid State Physics. 2015 Aug 1;12(8):1108-1110. https://doi.org/10.1002/pssc.201400293

Author

Kolevatov, I. ; Osinniy, V. ; Herms, M. ; Loshachenko, A. ; Shlyakhov, I. ; Kveder, V. ; Vyvenko, O. / Oxygen-related defects : Minority carrier lifetime killers in n-type Czochralski silicon wafers for solar cell application. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2015 ; Vol. 12, No. 8. pp. 1108-1110.

BibTeX

@article{2a8b5ca8320b4bd0b641c0529cb08769,
title = "Oxygen-related defects: Minority carrier lifetime killers in n-type Czochralski silicon wafers for solar cell application",
abstract = "Many authors (Haunschild et al., Phys. Status Solidi RRL 5, 199-201 (2012) [1]) reported about areas in Cz-Si with an extremely low lifetime of minority carriers after high temperature stages of solar cell manufacture. In such regions the minority carrier lifetime may be fallen 100 times after annealing, what leads to a considerable drop in the solar cell efficiency. In present work the electrical and structural properties of phosphorus doped Bosch Cz-Si wafers with degrading areas were studied by means of photoluminescence, deep level transient spectroscopy, transmission electron microscopy, electron energy loss spectroscopy and Fourier transform infrared spectroscopy. Based on these data it is concluded that the dominant recombination channel in the degrading areas is related to strained oxygen precipitates. We found electronic states of traps which may cause their formation.",
keywords = "Czochralski silicon, Oxygen precipitates, Solar cells",
author = "I. Kolevatov and V. Osinniy and M. Herms and A. Loshachenko and I. Shlyakhov and V. Kveder and O. Vyvenko",
year = "2015",
month = aug,
day = "1",
doi = "10.1002/pssc.201400293",
language = "English",
volume = "12",
pages = "1108--1110",
journal = "Physica Status Solidi C: Conferences",
issn = "1862-6351",
publisher = "Wiley-Blackwell",
number = "8",

}

RIS

TY - JOUR

T1 - Oxygen-related defects

T2 - Minority carrier lifetime killers in n-type Czochralski silicon wafers for solar cell application

AU - Kolevatov, I.

AU - Osinniy, V.

AU - Herms, M.

AU - Loshachenko, A.

AU - Shlyakhov, I.

AU - Kveder, V.

AU - Vyvenko, O.

PY - 2015/8/1

Y1 - 2015/8/1

N2 - Many authors (Haunschild et al., Phys. Status Solidi RRL 5, 199-201 (2012) [1]) reported about areas in Cz-Si with an extremely low lifetime of minority carriers after high temperature stages of solar cell manufacture. In such regions the minority carrier lifetime may be fallen 100 times after annealing, what leads to a considerable drop in the solar cell efficiency. In present work the electrical and structural properties of phosphorus doped Bosch Cz-Si wafers with degrading areas were studied by means of photoluminescence, deep level transient spectroscopy, transmission electron microscopy, electron energy loss spectroscopy and Fourier transform infrared spectroscopy. Based on these data it is concluded that the dominant recombination channel in the degrading areas is related to strained oxygen precipitates. We found electronic states of traps which may cause their formation.

AB - Many authors (Haunschild et al., Phys. Status Solidi RRL 5, 199-201 (2012) [1]) reported about areas in Cz-Si with an extremely low lifetime of minority carriers after high temperature stages of solar cell manufacture. In such regions the minority carrier lifetime may be fallen 100 times after annealing, what leads to a considerable drop in the solar cell efficiency. In present work the electrical and structural properties of phosphorus doped Bosch Cz-Si wafers with degrading areas were studied by means of photoluminescence, deep level transient spectroscopy, transmission electron microscopy, electron energy loss spectroscopy and Fourier transform infrared spectroscopy. Based on these data it is concluded that the dominant recombination channel in the degrading areas is related to strained oxygen precipitates. We found electronic states of traps which may cause their formation.

KW - Czochralski silicon

KW - Oxygen precipitates

KW - Solar cells

UR - http://www.scopus.com/inward/record.url?scp=84939654205&partnerID=8YFLogxK

U2 - 10.1002/pssc.201400293

DO - 10.1002/pssc.201400293

M3 - Article

AN - SCOPUS:84939654205

VL - 12

SP - 1108

EP - 1110

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 8

ER -

ID: 48574311