Research output: Contribution to journal › Conference article › peer-review
Oxidation effects in epitaxial Fe3O4 layers on MgO and MgAl2O4 substrates studied by X-ray absorption, fluorescence and photoemission. / Krasnikov, S. A.; Vinogradov, A. S.; Hallmeier, K. H.; Chassé, T.; Szargan, R.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 109, No. 1-3, 15.06.2004, p. 207-212.Research output: Contribution to journal › Conference article › peer-review
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TY - JOUR
T1 - Oxidation effects in epitaxial Fe3O4 layers on MgO and MgAl2O4 substrates studied by X-ray absorption, fluorescence and photoemission
AU - Krasnikov, S. A.
AU - Vinogradov, A. S.
AU - Hallmeier, K. H.
AU - Chassé, T.
AU - Szargan, R.
N1 - Copyright: Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2004/6/15
Y1 - 2004/6/15
N2 - Fe3O4 films of different thickness were epitaxially grown on single crystal MgO and MgAl2O4 substrates and studied by X-ray absorption, X-ray photoemission spectroscopy and X-ray fluorescence (XF). All samples were prepared by pulsed laser deposition (PLD) and some of them were covered by in situ prepared thin BaTiO3 protecting layer. The photoemission (VG ESCALAB 220i-XL) and absorption (total electron yield mode) measurements on epitaxial Fe3O4 films demonstrate the important role of the protecting layer to prevent the further oxidation of Fe3O4 to Fe2O3 in the case of thin films (2.5nm range). The resonant XF (X-ray monochromator XES 300 using synchrotron radiation at the U41-PGM beam-line at BESSY II) measurements at excitation energy 710eV (Fe L3 absorption edge) demonstrate the effect of the Fe 3d-O 2p hybridization in the iron oxide layers. Information about local partial densities of states was obtained for the oxidized Fe 3O4 film from a comparative analysis of the Fe L and O K XF and the valence-band photoelectron spectra.
AB - Fe3O4 films of different thickness were epitaxially grown on single crystal MgO and MgAl2O4 substrates and studied by X-ray absorption, X-ray photoemission spectroscopy and X-ray fluorescence (XF). All samples were prepared by pulsed laser deposition (PLD) and some of them were covered by in situ prepared thin BaTiO3 protecting layer. The photoemission (VG ESCALAB 220i-XL) and absorption (total electron yield mode) measurements on epitaxial Fe3O4 films demonstrate the important role of the protecting layer to prevent the further oxidation of Fe3O4 to Fe2O3 in the case of thin films (2.5nm range). The resonant XF (X-ray monochromator XES 300 using synchrotron radiation at the U41-PGM beam-line at BESSY II) measurements at excitation energy 710eV (Fe L3 absorption edge) demonstrate the effect of the Fe 3d-O 2p hybridization in the iron oxide layers. Information about local partial densities of states was obtained for the oxidized Fe 3O4 film from a comparative analysis of the Fe L and O K XF and the valence-band photoelectron spectra.
KW - Epitaxy
KW - Iron oxides
KW - Pulsed laser deposition
KW - X-ray absorption
KW - X-ray fluorescence
KW - X-ray photoemission
UR - http://www.scopus.com/inward/record.url?scp=2342584760&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2003.10.066
DO - 10.1016/j.mseb.2003.10.066
M3 - Conference article
AN - SCOPUS:2342584760
VL - 109
SP - 207
EP - 212
JO - Materials Science and Engineering B
JF - Materials Science and Engineering B
SN - 0921-5107
IS - 1-3
T2 - EMRS 2003, Symposium I, Funtional Metal Oxides - Semiconductors
Y2 - 10 June 2003 through 13 June 2003
ER -
ID: 76051552