Standard
Optical properties of GaAs nanowires studied by low temperature photoluminescence. / Novikov, B. V.; A.Yu., Serov; Filosofov, N. G.; Shtrom, I. V.; Talalaev, V. G.; Vyvenko, O. F.; Ubyivovk, E. V.; Samsonenko, Yu. B.; Bouravleuv, A. D.; Soshnikov, I. P.; Sibirev, N. V.; Dubrovskii, V. G.; Cirlin, G. E.
17th International Symposium NANOSTRUCTURES: Physics and Technology: proceedings. Minsk : ФТИ им.Иоффе, 2009. p. 186-187.
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Harvard
Novikov, BV, A.Yu., S, Filosofov, NG, Shtrom, IV, Talalaev, VG
, Vyvenko, OF, Ubyivovk, EV, Samsonenko, YB, Bouravleuv, AD, Soshnikov, IP
, Sibirev, NV, Dubrovskii, VG & Cirlin, GE 2009,
Optical properties of GaAs nanowires studied by low temperature photoluminescence. in
17th International Symposium NANOSTRUCTURES: Physics and Technology: proceedings. ФТИ им.Иоффе, Minsk, pp. 186-187, NANOSTRUCTURES: Physics and Technology, Минск, Belarus,
22/06/09. <
http://www.issp.ac.ru/ebooks/conf/nano09hr.pdf>
APA
Novikov, B. V., A.Yu., S., Filosofov, N. G., Shtrom, I. V., Talalaev, V. G.
, Vyvenko, O. F., Ubyivovk, E. V., Samsonenko, Y. B., Bouravleuv, A. D., Soshnikov, I. P.
, Sibirev, N. V., Dubrovskii, V. G., & Cirlin, G. E. (2009).
Optical properties of GaAs nanowires studied by low temperature photoluminescence. In
17th International Symposium NANOSTRUCTURES: Physics and Technology: proceedings (pp. 186-187). ФТИ им.Иоффе.
http://www.issp.ac.ru/ebooks/conf/nano09hr.pdf
Vancouver
Author
Novikov, B. V. ; A.Yu., Serov ; Filosofov, N. G. ; Shtrom, I. V. ; Talalaev, V. G.
; Vyvenko, O. F. ; Ubyivovk, E. V. ; Samsonenko, Yu. B. ; Bouravleuv, A. D. ; Soshnikov, I. P.
; Sibirev, N. V. ; Dubrovskii, V. G. ; Cirlin, G. E. /
Optical properties of GaAs nanowires studied by low temperature photoluminescence. 17th International Symposium NANOSTRUCTURES: Physics and Technology: proceedings. Minsk : ФТИ им.Иоффе, 2009. pp. 186-187
BibTeX
@inproceedings{59d9cf3b55e2445e8ac54e1599f2a3f9,
title = "Optical properties of GaAs nanowires studied by low temperature photoluminescence",
abstract = "Self-standing III–V nanowires (NWs) are promising building blocks for future optoelectronic devices, in particular,LEDs, lasers, photodetectors and solar cells. In this work we present the results of low temperature photoluminescence (PL)characterization of GaAs NWs grown by Au-assisted molecular beam epitaxy (MBE) on the GaAs(111)B and Si(111)substrates. PL spectra contain exciton peaks from zinc blende (ZB) and wurtzite (WZ) crystal structures of GaAs, influencedby the quantum confinement effects. Theoretical estimates for the exciton radiation peaks depending on the crystal structureand the NW radius are presented and compared to the experimental data.",
author = "Novikov, {B. V.} and Serov A.Yu. and Filosofov, {N. G.} and Shtrom, {I. V.} and Talalaev, {V. G.} and Vyvenko, {O. F.} and Ubyivovk, {E. V.} and Samsonenko, {Yu. B.} and Bouravleuv, {A. D.} and Soshnikov, {I. P.} and Sibirev, {N. V.} and Dubrovskii, {V. G.} and Cirlin, {G. E.}",
year = "2009",
language = "English",
isbn = " 9785936340512",
pages = "186--187",
booktitle = "17th International Symposium NANOSTRUCTURES: Physics and Technology",
publisher = "ФТИ им.Иоффе",
address = "Russian Federation",
note = "NANOSTRUCTURES: Physics and Technology : 17th International Symposium ; Conference date: 22-06-2009 Through 26-06-2009",
}
RIS
TY - GEN
T1 - Optical properties of GaAs nanowires studied by low temperature photoluminescence
AU - Novikov, B. V.
AU - A.Yu., Serov
AU - Filosofov, N. G.
AU - Shtrom, I. V.
AU - Talalaev, V. G.
AU - Vyvenko, O. F.
AU - Ubyivovk, E. V.
AU - Samsonenko, Yu. B.
AU - Bouravleuv, A. D.
AU - Soshnikov, I. P.
AU - Sibirev, N. V.
AU - Dubrovskii, V. G.
AU - Cirlin, G. E.
PY - 2009
Y1 - 2009
N2 - Self-standing III–V nanowires (NWs) are promising building blocks for future optoelectronic devices, in particular,LEDs, lasers, photodetectors and solar cells. In this work we present the results of low temperature photoluminescence (PL)characterization of GaAs NWs grown by Au-assisted molecular beam epitaxy (MBE) on the GaAs(111)B and Si(111)substrates. PL spectra contain exciton peaks from zinc blende (ZB) and wurtzite (WZ) crystal structures of GaAs, influencedby the quantum confinement effects. Theoretical estimates for the exciton radiation peaks depending on the crystal structureand the NW radius are presented and compared to the experimental data.
AB - Self-standing III–V nanowires (NWs) are promising building blocks for future optoelectronic devices, in particular,LEDs, lasers, photodetectors and solar cells. In this work we present the results of low temperature photoluminescence (PL)characterization of GaAs NWs grown by Au-assisted molecular beam epitaxy (MBE) on the GaAs(111)B and Si(111)substrates. PL spectra contain exciton peaks from zinc blende (ZB) and wurtzite (WZ) crystal structures of GaAs, influencedby the quantum confinement effects. Theoretical estimates for the exciton radiation peaks depending on the crystal structureand the NW radius are presented and compared to the experimental data.
M3 - Conference contribution
SN - 9785936340512
SP - 186
EP - 187
BT - 17th International Symposium NANOSTRUCTURES: Physics and Technology
PB - ФТИ им.Иоффе
CY - Minsk
T2 - NANOSTRUCTURES: Physics and Technology
Y2 - 22 June 2009 through 26 June 2009
ER -
