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Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC. / Eliseyev, I. A.; Davydov, V. Yu; Smirnov, A. N.; Nestoklon, M. O.; Dementev, P. A.; Lebedev, S. P.; Lebedev, A. A.; Zubov, A. V.; Mathew, S.; Pezoldt, J.; Bokai, K. A.; Usachov, D. Yu.

In: Semiconductors, Vol. 53, No. 14, 01.12.2019, p. 1904-1909.

Research output: Contribution to journal › Article › peer-review

Harvard

Eliseyev, IA, Davydov, VY, Smirnov, AN, Nestoklon, MO, Dementev, PA, Lebedev, SP, Lebedev, AA, Zubov, AV, Mathew, S, Pezoldt, J, Bokai, KA & Usachov, DY 2019, 'Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC', Semiconductors, vol. 53, no. 14, pp. 1904-1909. https://doi.org/10.1134/S1063782619140057

APA

Eliseyev, I. A., Davydov, V. Y., Smirnov, A. N., Nestoklon, M. O., Dementev, P. A., Lebedev, S. P., Lebedev, A. A., Zubov, A. V., Mathew, S., Pezoldt, J., Bokai, K. A., & Usachov, D. Y. (2019). Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC. Semiconductors, 53(14), 1904-1909. https://doi.org/10.1134/S1063782619140057

Vancouver

Eliseyev IA, Davydov VY, Smirnov AN, Nestoklon MO, Dementev PA, Lebedev SP et al. Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC. Semiconductors. 2019 Dec 1;53(14):1904-1909. https://doi.org/10.1134/S1063782619140057

Author

Eliseyev, I. A. ; Davydov, V. Yu ; Smirnov, A. N. ; Nestoklon, M. O. ; Dementev, P. A. ; Lebedev, S. P. ; Lebedev, A. A. ; Zubov, A. V. ; Mathew, S. ; Pezoldt, J. ; Bokai, K. A. ; Usachov, D. Yu. / Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC. In: Semiconductors. 2019 ; Vol. 53, No. 14. pp. 1904-1909.

BibTeX

@article{bd37473d09fb48898d911852f5ca6300,
title = "Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC",
abstract = "Abstract: Systematic studies of the effect of the electron concentration on the Raman spectra of single-layer graphene films have been carried out. The samples were grown by thermal destruction of the Si-face of the 4H-SiC substrate. Analysis of the results led us to the conclusion that for the correct estimation of the electron concentration and strain values in graphene using Raman spectroscopy data it is necessary to take into account the value of the Fermi velocity in the graphene layer. This conclusion is valid for graphene on any other substrate as well, since the Fermi velocity in graphene depends on the dielectric constant of the substrate.",
keywords = "4H-SiC, electron concentration, strain, Raman spectroscopy, angle-resolved photoemission spectroscopy, Hall effect, graphene, sublimation epitaxy",
author = "Eliseyev, {I. A.} and Davydov, {V. Yu} and Smirnov, {A. N.} and Nestoklon, {M. O.} and Dementev, {P. A.} and Lebedev, {S. P.} and Lebedev, {A. A.} and Zubov, {A. V.} and S. Mathew and J. Pezoldt and Bokai, {K. A.} and Usachov, {D. Yu}",
year = "2019",
month = dec,
day = "1",
doi = "10.1134/S1063782619140057",
language = "English",
volume = "53",
pages = "1904--1909",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "14",

}

RIS

TY - JOUR

T1 - Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

AU - Eliseyev, I. A.

AU - Davydov, V. Yu

AU - Smirnov, A. N.

AU - Nestoklon, M. O.

AU - Dementev, P. A.

AU - Lebedev, S. P.

AU - Lebedev, A. A.

AU - Zubov, A. V.

AU - Mathew, S.

AU - Pezoldt, J.

AU - Bokai, K. A.

AU - Usachov, D. Yu

PY - 2019/12/1

Y1 - 2019/12/1

N2 - Abstract: Systematic studies of the effect of the electron concentration on the Raman spectra of single-layer graphene films have been carried out. The samples were grown by thermal destruction of the Si-face of the 4H-SiC substrate. Analysis of the results led us to the conclusion that for the correct estimation of the electron concentration and strain values in graphene using Raman spectroscopy data it is necessary to take into account the value of the Fermi velocity in the graphene layer. This conclusion is valid for graphene on any other substrate as well, since the Fermi velocity in graphene depends on the dielectric constant of the substrate.

AB - Abstract: Systematic studies of the effect of the electron concentration on the Raman spectra of single-layer graphene films have been carried out. The samples were grown by thermal destruction of the Si-face of the 4H-SiC substrate. Analysis of the results led us to the conclusion that for the correct estimation of the electron concentration and strain values in graphene using Raman spectroscopy data it is necessary to take into account the value of the Fermi velocity in the graphene layer. This conclusion is valid for graphene on any other substrate as well, since the Fermi velocity in graphene depends on the dielectric constant of the substrate.

KW - 4H-SiC, electron concentration, strain, Raman spectroscopy, angle-resolved photoemission spectroscopy, Hall effect

KW - graphene, sublimation epitaxy

UR - http://www.scopus.com/inward/record.url?scp=85077060555&partnerID=8YFLogxK

U2 - 10.1134/S1063782619140057

DO - 10.1134/S1063782619140057

M3 - Article

AN - SCOPUS:85077060555

VL - 53

SP - 1904

EP - 1909

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 14

ER -

ID: 53965496