On-chip light detection using integrated microdisk laser and photodetector bonded onto Si board

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On-chip light detection using integrated microdisk laser and photodetector bonded onto Si board. / Kryzhanovskaya, Natalia V.; Zubov, Fedor I.; Moiseev, Eduard I.; Dragunova, Anna S.; Ivanov, Konstantin A.; Maximov, Mikhail V.; Kaluzhnyy, Nikolay A.; Mintairov, Sergey A.; Mikushev, Sergey V.; Kulagina, Marina M.; Guseva, Julia A.; Likhachev, Alexey I.; Zhukov, Alexey E.

In: Laser Physics Letters, Vol. 19, No. 1, 016201, 01.2022.

Research output: Contribution to journal › Article › peer-review

Harvard

Kryzhanovskaya, NV, Zubov, FI, Moiseev, EI, Dragunova, AS, Ivanov, KA, Maximov, MV, Kaluzhnyy, NA, Mintairov, SA, Mikushev, SV, Kulagina, MM, Guseva, JA, Likhachev, AI & Zhukov, AE 2022, 'On-chip light detection using integrated microdisk laser and photodetector bonded onto Si board', Laser Physics Letters, vol. 19, no. 1, 016201. https://doi.org/10.1088/1612-202x/ac3a0f

APA

Kryzhanovskaya, N. V., Zubov, F. I., Moiseev, E. I., Dragunova, A. S., Ivanov, K. A., Maximov, M. V., Kaluzhnyy, N. A., Mintairov, S. A., Mikushev, S. V., Kulagina, M. M., Guseva, J. A., Likhachev, A. I., & Zhukov, A. E. (2022). On-chip light detection using integrated microdisk laser and photodetector bonded onto Si board. Laser Physics Letters, 19(1), [016201]. https://doi.org/10.1088/1612-202x/ac3a0f

Vancouver

Kryzhanovskaya NV, Zubov FI, Moiseev EI, Dragunova AS, Ivanov KA, Maximov MV et al. On-chip light detection using integrated microdisk laser and photodetector bonded onto Si board. Laser Physics Letters. 2022 Jan;19(1). 016201. https://doi.org/10.1088/1612-202x/ac3a0f

Author

Kryzhanovskaya, Natalia V. ; Zubov, Fedor I. ; Moiseev, Eduard I. ; Dragunova, Anna S. ; Ivanov, Konstantin A. ; Maximov, Mikhail V. ; Kaluzhnyy, Nikolay A. ; Mintairov, Sergey A. ; Mikushev, Sergey V. ; Kulagina, Marina M. ; Guseva, Julia A. ; Likhachev, Alexey I. ; Zhukov, Alexey E. / On-chip light detection using integrated microdisk laser and photodetector bonded onto Si board. In: Laser Physics Letters. 2022 ; Vol. 19, No. 1.

BibTeX

@article{568eaa91f60945199a9e88201a0f754a,

title = "On-chip light detection using integrated microdisk laser and photodetector bonded onto Si board",

abstract = "Characteristics of a compact III V optocoupler heterogeneously integrated on a silicon substrate and formed by a 31 um in diameter microdisk (MD) laser with a closely-spaced 50 um × 200 um waveguide photodetector are presented. Both optoelectronic devices were fabricated from the epitaxial heterostroctructures with InGaAs/GaAs quantum well-dot layers. The measured dark current density of the photodetector was as low as 2.1 uA cm?2. The maximum link efficiency determined as the ratio of the photodiode photocurrent increment to the increment of the microlaser bias current was 1% 1.4%. The developed heterogeneous integration of III V devices to silicon boards by Au-Au thermocompression bonding is useful for avoiding the difficulties associated with III V epitaxial growth on Si and facilitates integration of several devices with different active layers and waveguides. The application of MD lasers with their lateral light output is promising for simplifying requirements for optical loss at III V/Si interface.",

keywords = "Heterogeneous integration, integrated transceiver, Microdisk laser, Optocoupler, P-i-n photodiode, Quantum well-dots, p-i-n photodiode, heterogeneous integration, QUANTUM, PERFORMANCE, quantum well-dots, WAVE-GUIDE, optocoupler, microdisk laser",

author = "Kryzhanovskaya, {Natalia V.} and Zubov, {Fedor I.} and Moiseev, {Eduard I.} and Dragunova, {Anna S.} and Ivanov, {Konstantin A.} and Maximov, {Mikhail V.} and Kaluzhnyy, {Nikolay A.} and Mintairov, {Sergey A.} and Mikushev, {Sergey V.} and Kulagina, {Marina M.} and Guseva, {Julia A.} and Likhachev, {Alexey I.} and Zhukov, {Alexey E.}",

year = "2022",

month = jan,

doi = "10.1088/1612-202x/ac3a0f",

language = "English",

volume = "19",

journal = "Laser Physics Letters",

issn = "1612-2011",

publisher = "IOP Publishing Ltd.",

number = "1",

}

RIS

TY - JOUR

T1 - On-chip light detection using integrated microdisk laser and photodetector bonded onto Si board

AU - Kryzhanovskaya, Natalia V.

AU - Zubov, Fedor I.

AU - Moiseev, Eduard I.

AU - Dragunova, Anna S.

AU - Ivanov, Konstantin A.

AU - Maximov, Mikhail V.

AU - Kaluzhnyy, Nikolay A.

AU - Mintairov, Sergey A.

AU - Mikushev, Sergey V.

AU - Kulagina, Marina M.

AU - Guseva, Julia A.

AU - Likhachev, Alexey I.

AU - Zhukov, Alexey E.

PY - 2022/1

Y1 - 2022/1

N2 - Characteristics of a compact III V optocoupler heterogeneously integrated on a silicon substrate and formed by a 31 um in diameter microdisk (MD) laser with a closely-spaced 50 um × 200 um waveguide photodetector are presented. Both optoelectronic devices were fabricated from the epitaxial heterostroctructures with InGaAs/GaAs quantum well-dot layers. The measured dark current density of the photodetector was as low as 2.1 uA cm?2. The maximum link efficiency determined as the ratio of the photodiode photocurrent increment to the increment of the microlaser bias current was 1% 1.4%. The developed heterogeneous integration of III V devices to silicon boards by Au-Au thermocompression bonding is useful for avoiding the difficulties associated with III V epitaxial growth on Si and facilitates integration of several devices with different active layers and waveguides. The application of MD lasers with their lateral light output is promising for simplifying requirements for optical loss at III V/Si interface.

AB - Characteristics of a compact III V optocoupler heterogeneously integrated on a silicon substrate and formed by a 31 um in diameter microdisk (MD) laser with a closely-spaced 50 um × 200 um waveguide photodetector are presented. Both optoelectronic devices were fabricated from the epitaxial heterostroctructures with InGaAs/GaAs quantum well-dot layers. The measured dark current density of the photodetector was as low as 2.1 uA cm?2. The maximum link efficiency determined as the ratio of the photodiode photocurrent increment to the increment of the microlaser bias current was 1% 1.4%. The developed heterogeneous integration of III V devices to silicon boards by Au-Au thermocompression bonding is useful for avoiding the difficulties associated with III V epitaxial growth on Si and facilitates integration of several devices with different active layers and waveguides. The application of MD lasers with their lateral light output is promising for simplifying requirements for optical loss at III V/Si interface.

KW - Heterogeneous integration

KW - integrated transceiver

KW - Microdisk laser

KW - Optocoupler

KW - P-i-n photodiode

KW - Quantum well-dots

KW - p-i-n photodiode

KW - heterogeneous integration

KW - QUANTUM

KW - PERFORMANCE

KW - quantum well-dots

KW - WAVE-GUIDE

KW - optocoupler

KW - microdisk laser

UR - http://www.scopus.com/inward/record.url?scp=85120816946&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/ee0b2ed8-f8e6-3805-a4d1-8e163bf83c18/

U2 - 10.1088/1612-202x/ac3a0f

DO - 10.1088/1612-202x/ac3a0f

M3 - Article

AN - SCOPUS:85120816946

VL - 19

JO - Laser Physics Letters

JF - Laser Physics Letters

SN - 1612-2011

IS - 1

M1 - 016201

ER -

ID: 92645930