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On the Suppression of Electron-Hole Exchange Interaction in a Reservoir of Nonradiative Excitons. / Trifonov, A. V.; Ignatiev, I. V.; Kavokin, K. V.; Kavokin, A. V.; Shapochkin, P. Yu.; Efimov, Yu P.; Eliseev, S. A.; Lovtcius, V. A.

In: Semiconductors, Vol. 53, No. 9, 09.2019, p. 1170-1174.

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Trifonov, A. V. ; Ignatiev, I. V. ; Kavokin, K. V. ; Kavokin, A. V. ; Shapochkin, P. Yu. ; Efimov, Yu P. ; Eliseev, S. A. ; Lovtcius, V. A. / On the Suppression of Electron-Hole Exchange Interaction in a Reservoir of Nonradiative Excitons. In: Semiconductors. 2019 ; Vol. 53, No. 9. pp. 1170-1174.

BibTeX

@article{35c9b101e4dd4162b25c61527783251e,
title = "On the Suppression of Electron-Hole Exchange Interaction in a Reservoir of Nonradiative Excitons",
abstract = "Mechanisms of the suppression of the electron-hole exchange interaction in nonradiative excitons with a large in-plane wave vector in high-quality heterostructures with quantum wells are analyzed theoretically. It is shown that the dominant suppression mechanism is exciton-exciton scattering accompanied by the mutual spin flips of like carriers (either two electrons or two holes), comprising the excitons. As a result, the electron spin polarization in nonradiative excitons may be retained for a long time. The analysis of experimental data shows that this relaxation time can exceed one nanosecond. This long-term and optically controllable spin memory in an exciton reservoir may be of interest for future information technologies.",
keywords = "exchange interaction, exciton, quantum well",
author = "Trifonov, {A. V.} and Ignatiev, {I. V.} and Kavokin, {K. V.} and Kavokin, {A. V.} and Shapochkin, {P. Yu.} and Efimov, {Yu P.} and Eliseev, {S. A.} and Lovtcius, {V. A.}",
year = "2019",
month = sep,
doi = "10.1134/S1063782619090239",
language = "English",
volume = "53",
pages = "1170--1174",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "9",

}

RIS

TY - JOUR

T1 - On the Suppression of Electron-Hole Exchange Interaction in a Reservoir of Nonradiative Excitons

AU - Trifonov, A. V.

AU - Ignatiev, I. V.

AU - Kavokin, K. V.

AU - Kavokin, A. V.

AU - Shapochkin, P. Yu.

AU - Efimov, Yu P.

AU - Eliseev, S. A.

AU - Lovtcius, V. A.

PY - 2019/9

Y1 - 2019/9

N2 - Mechanisms of the suppression of the electron-hole exchange interaction in nonradiative excitons with a large in-plane wave vector in high-quality heterostructures with quantum wells are analyzed theoretically. It is shown that the dominant suppression mechanism is exciton-exciton scattering accompanied by the mutual spin flips of like carriers (either two electrons or two holes), comprising the excitons. As a result, the electron spin polarization in nonradiative excitons may be retained for a long time. The analysis of experimental data shows that this relaxation time can exceed one nanosecond. This long-term and optically controllable spin memory in an exciton reservoir may be of interest for future information technologies.

AB - Mechanisms of the suppression of the electron-hole exchange interaction in nonradiative excitons with a large in-plane wave vector in high-quality heterostructures with quantum wells are analyzed theoretically. It is shown that the dominant suppression mechanism is exciton-exciton scattering accompanied by the mutual spin flips of like carriers (either two electrons or two holes), comprising the excitons. As a result, the electron spin polarization in nonradiative excitons may be retained for a long time. The analysis of experimental data shows that this relaxation time can exceed one nanosecond. This long-term and optically controllable spin memory in an exciton reservoir may be of interest for future information technologies.

KW - exchange interaction

KW - exciton

KW - quantum well

UR - http://www.scopus.com/inward/record.url?scp=85071865794&partnerID=8YFLogxK

UR - http://www.mendeley.com/research/suppression-electronhole-exchange-interaction-reservoir-nonradiative-excitons

U2 - 10.1134/S1063782619090239

DO - 10.1134/S1063782619090239

M3 - Article

AN - SCOPUS:85071865794

VL - 53

SP - 1170

EP - 1174

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

ER -

ID: 48978963