Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid substrate containing layers of silicon carbide and porous silicon. Using X-ray diffractometry, Raman and photoluminescence spectroscopy, it is shown that thin films formed on a hybrid substrate have minimal residual stresses and intense photoluminescence.