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Observation of exciton-phonon coupling in MoSe2 monolayers. / Shree, S.; Robert, C.; Han, B.; Amand, T.; Balocchi, A.; Manca, M.; Courtade, E.; Marie, X.; Taniguchi, T.; Watanabe, K.; Glazov, M. M.; Urbaszek, B.

In: Physical Review B, Vol. 98, No. 3, 035302, 16.07.2018.

Research output: Contribution to journalArticlepeer-review

Harvard

Shree, S, Robert, C, Han, B, Amand, T, Balocchi, A, Manca, M, Courtade, E, Marie, X, Taniguchi, T, Watanabe, K, Glazov, MM & Urbaszek, B 2018, 'Observation of exciton-phonon coupling in MoSe2 monolayers', Physical Review B, vol. 98, no. 3, 035302. https://doi.org/10.1103/PhysRevB.98.035302

APA

Shree, S., Robert, C., Han, B., Amand, T., Balocchi, A., Manca, M., Courtade, E., Marie, X., Taniguchi, T., Watanabe, K., Glazov, M. M., & Urbaszek, B. (2018). Observation of exciton-phonon coupling in MoSe2 monolayers. Physical Review B, 98(3), [035302]. https://doi.org/10.1103/PhysRevB.98.035302

Vancouver

Shree S, Robert C, Han B, Amand T, Balocchi A, Manca M et al. Observation of exciton-phonon coupling in MoSe2 monolayers. Physical Review B. 2018 Jul 16;98(3). 035302. https://doi.org/10.1103/PhysRevB.98.035302

Author

Shree, S. ; Robert, C. ; Han, B. ; Amand, T. ; Balocchi, A. ; Manca, M. ; Courtade, E. ; Marie, X. ; Taniguchi, T. ; Watanabe, K. ; Glazov, M. M. ; Urbaszek, B. / Observation of exciton-phonon coupling in MoSe2 monolayers. In: Physical Review B. 2018 ; Vol. 98, No. 3.

BibTeX

@article{dcb1102bfa5e4849b57a61f4fce41696,
title = "Observation of exciton-phonon coupling in MoSe2 monolayers",
abstract = "We study experimentally and theoretically the exciton-phonon interaction in MoSe2 monolayers encapsulated in hexagonal BN, which has an important impact on both optical absorption and emission processes. The exciton transition linewidth down to 1 meV at low temperatures makes it possible to observe high-energy tails in absorption and emission extending over several meV, not masked by inhomogeneous broadening. We develop an analytical theory of the exciton-phonon interaction accounting for the deformation potential induced by the longitudinal acoustic phonons, which plays an important role in exciton formation. The theory allows fitting absorption and emission spectra and permits estimating the deformation potential in MoSe2 monolayers. We underline the reasons why exciton-phonon coupling is much stronger in two-dimensional transition metal dichalcogenides as compared to conventional quantum well structures. The importance of exciton-phonon interactions is further highlighted by the observation of a multitude of Raman features in the photoluminescence excitation experiments.",
keywords = "TRANSITION-METAL DICHALCOGENIDES, GAAS QUANTUM-WELLS, RAMAN-SCATTERING, DYNAMICS, WSE2, PHOTOLUMINESCENCE, HETEROSTRUCTURES, OPTOELECTRONICS, SEMICONDUCTOR, RELAXATION",
author = "S. Shree and C. Robert and B. Han and T. Amand and A. Balocchi and M. Manca and E. Courtade and X. Marie and T. Taniguchi and K. Watanabe and Glazov, {M. M.} and B. Urbaszek",
year = "2018",
month = jul,
day = "16",
doi = "10.1103/PhysRevB.98.035302",
language = "English",
volume = "98",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "3",

}

RIS

TY - JOUR

T1 - Observation of exciton-phonon coupling in MoSe2 monolayers

AU - Shree, S.

AU - Robert, C.

AU - Han, B.

AU - Amand, T.

AU - Balocchi, A.

AU - Manca, M.

AU - Courtade, E.

AU - Marie, X.

AU - Taniguchi, T.

AU - Watanabe, K.

AU - Glazov, M. M.

AU - Urbaszek, B.

PY - 2018/7/16

Y1 - 2018/7/16

N2 - We study experimentally and theoretically the exciton-phonon interaction in MoSe2 monolayers encapsulated in hexagonal BN, which has an important impact on both optical absorption and emission processes. The exciton transition linewidth down to 1 meV at low temperatures makes it possible to observe high-energy tails in absorption and emission extending over several meV, not masked by inhomogeneous broadening. We develop an analytical theory of the exciton-phonon interaction accounting for the deformation potential induced by the longitudinal acoustic phonons, which plays an important role in exciton formation. The theory allows fitting absorption and emission spectra and permits estimating the deformation potential in MoSe2 monolayers. We underline the reasons why exciton-phonon coupling is much stronger in two-dimensional transition metal dichalcogenides as compared to conventional quantum well structures. The importance of exciton-phonon interactions is further highlighted by the observation of a multitude of Raman features in the photoluminescence excitation experiments.

AB - We study experimentally and theoretically the exciton-phonon interaction in MoSe2 monolayers encapsulated in hexagonal BN, which has an important impact on both optical absorption and emission processes. The exciton transition linewidth down to 1 meV at low temperatures makes it possible to observe high-energy tails in absorption and emission extending over several meV, not masked by inhomogeneous broadening. We develop an analytical theory of the exciton-phonon interaction accounting for the deformation potential induced by the longitudinal acoustic phonons, which plays an important role in exciton formation. The theory allows fitting absorption and emission spectra and permits estimating the deformation potential in MoSe2 monolayers. We underline the reasons why exciton-phonon coupling is much stronger in two-dimensional transition metal dichalcogenides as compared to conventional quantum well structures. The importance of exciton-phonon interactions is further highlighted by the observation of a multitude of Raman features in the photoluminescence excitation experiments.

KW - TRANSITION-METAL DICHALCOGENIDES

KW - GAAS QUANTUM-WELLS

KW - RAMAN-SCATTERING

KW - DYNAMICS

KW - WSE2

KW - PHOTOLUMINESCENCE

KW - HETEROSTRUCTURES

KW - OPTOELECTRONICS

KW - SEMICONDUCTOR

KW - RELAXATION

UR - http://www.scopus.com/inward/record.url?scp=85050471483&partnerID=8YFLogxK

UR - http://www.mendeley.com/research/observation-excitonphonon-coupling-mose2-monolayers

U2 - 10.1103/PhysRevB.98.035302

DO - 10.1103/PhysRevB.98.035302

M3 - Article

AN - SCOPUS:85050471483

VL - 98

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 3

M1 - 035302

ER -

ID: 36286656