The interaction of Al4 clusters with a GaAs (001) crystalline substrate has been studied using the method of molecular dynamics. Some physical characteristics describing the surface diffusion process (coefficients of diffusion, adhesion and others) are computed as functions of the substrate temperature, magnitude and direction of the cluster speed vector.

Original languageEnglish
Pages (from-to)345-352
Number of pages8
JournalSurface Investigation X-Ray, Synchrotron and Neutron Techniques
Volume14
Issue number3
StatePublished - 1 Dec 1998

    Scopus subject areas

  • Surfaces and Interfaces

ID: 36981279