Modification of zinc sulfide phosphors by irradiation with gamma-ray photons and electrons

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Modification of zinc sulfide phosphors by irradiation with gamma-ray photons and electrons. / Sychov, M. M.; Komarov, E. V.; Grigor'ev, L. V.; Myakin, S. V.; Vasil'eva, I. V.; Kuznetsov, A. I.; Usacheva, V. P.

In: Semiconductors, Vol. 40, No. 9, 09.2006, p. 1016-1020.

Research output: Contribution to journal › Article › peer-review

Author

Sychov, M. M. ; Komarov, E. V. ; Grigor'ev, L. V. ; Myakin, S. V. ; Vasil'eva, I. V. ; Kuznetsov, A. I. ; Usacheva, V. P. / Modification of zinc sulfide phosphors by irradiation with gamma-ray photons and electrons. In: Semiconductors. 2006 ; Vol. 40, No. 9. pp. 1016-1020.

BibTeX

@article{3f0f93153a91461da5c7341ffb910319,

title = "Modification of zinc sulfide phosphors by irradiation with gamma-ray photons and electrons",

abstract = "The effect of γ-ray photons and electron beams on electroluminescence of the ZnS:(Cu, Br) and ZnS:(Cu, Al, Br) phosphors is studied. Irradiation of both samples with γ-ray photons and of the ZnS(Cu, Br) sample with electrons makes it possible to increase the emission intensity by 20-35% at the optimal radiation dose of 5-10 Mrad. In this case, the relative intensity of the green-emission band increases in the electroluminescence spectra of all samples, presumably due to dissociation of the CuI-CuZn and BrZn-V Zn donor-acceptor pairs. Thus, irradiation makes it possible to control the intensity and spectrum of phosphors' emission, which can be used for nonchemical lithography of luminescent layers.",

author = "Sychov, {M. M.} and Komarov, {E. V.} and Grigor'ev, {L. V.} and Myakin, {S. V.} and Vasil'eva, {I. V.} and Kuznetsov, {A. I.} and Usacheva, {V. P.}",

year = "2006",

month = sep,

doi = "10.1134/S1063782606090041",

language = "English",

volume = "40",

pages = "1016--1020",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "9",

}

RIS

TY - JOUR

T1 - Modification of zinc sulfide phosphors by irradiation with gamma-ray photons and electrons

AU - Sychov, M. M.

AU - Komarov, E. V.

AU - Grigor'ev, L. V.

AU - Myakin, S. V.

AU - Vasil'eva, I. V.

AU - Kuznetsov, A. I.

AU - Usacheva, V. P.

PY - 2006/9

Y1 - 2006/9

N2 - The effect of γ-ray photons and electron beams on electroluminescence of the ZnS:(Cu, Br) and ZnS:(Cu, Al, Br) phosphors is studied. Irradiation of both samples with γ-ray photons and of the ZnS(Cu, Br) sample with electrons makes it possible to increase the emission intensity by 20-35% at the optimal radiation dose of 5-10 Mrad. In this case, the relative intensity of the green-emission band increases in the electroluminescence spectra of all samples, presumably due to dissociation of the CuI-CuZn and BrZn-V Zn donor-acceptor pairs. Thus, irradiation makes it possible to control the intensity and spectrum of phosphors' emission, which can be used for nonchemical lithography of luminescent layers.

AB - The effect of γ-ray photons and electron beams on electroluminescence of the ZnS:(Cu, Br) and ZnS:(Cu, Al, Br) phosphors is studied. Irradiation of both samples with γ-ray photons and of the ZnS(Cu, Br) sample with electrons makes it possible to increase the emission intensity by 20-35% at the optimal radiation dose of 5-10 Mrad. In this case, the relative intensity of the green-emission band increases in the electroluminescence spectra of all samples, presumably due to dissociation of the CuI-CuZn and BrZn-V Zn donor-acceptor pairs. Thus, irradiation makes it possible to control the intensity and spectrum of phosphors' emission, which can be used for nonchemical lithography of luminescent layers.

UR - http://www.scopus.com/inward/record.url?scp=33748809577&partnerID=8YFLogxK

U2 - 10.1134/S1063782606090041

DO - 10.1134/S1063782606090041

M3 - Article

AN - SCOPUS:33748809577

VL - 40

SP - 1016

EP - 1020

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

ER -

ID: 86118492