Modeling the interfacial profiles in III-V VLS axial nanowire heterostructures based on group V interchange

DOI

https://doi.org/10.1109/ICLO59702.2024.10624565
Final published version

Владимир Германович Дубровский

abstract-Interfacial abruptness in axial heterostructures within III-V nanowires (NWs) grown by the vapor-liquid-solid (VLS) method is affected by the reservoir effect in catalyst droplets which broadens the heterointerfaces. Here, we present a model which provides explicitly the interfacial profiles in double NW heterostructures based on group V interchange of any composition, and fit the data on Au-catalyzed InP/InAs/InP, self-catalyzed GaAs0.6P0.4/GaxAsxP1-x/GaAs0.6P0.4 and GaP/GaAsxP1-x/GaP axial NW heterostructures.

Original language	English
Title of host publication	2024 International Conference Laser Optics, ICLO 2024 - Proceedings
Pages	349
DOIs	https://doi.org/10.1109/ICLO59702.2024.10624565
State	Published - 1 Jul 2024
Event	21st International Conference Laser Optics - Санкт-Петербург, Russian Federation Duration: 1 Jul 2024 → 5 Jul 2024 Conference number: 21 https://laseroptics.org/ https://laseroptics.org

Publication series

Name	IEEE Xplore Digital Library
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISSN (Print)	2473-2001

Conference

Conference	21st International Conference Laser Optics
Abbreviated title	ICLO 2024
Country/Territory	Russian Federation
City	Санкт-Петербург
Period	1/07/24 → 5/07/24
Internet address	https://laseroptics.org/ https://laseroptics.org

Research areas

III-V nanowire heterostructures, group V interchange, modeling

ID: 124440183