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Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells. / Khramtsov, E. S. ; Gribakin, B. F. ; Trifonov, A. V. ; Ignatiev, I. V. .

In: Semiconductors, Vol. 54, No. 11, 2020, p. 1503-1505.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Khramtsov, ES, Gribakin, BF, Trifonov, AV & Ignatiev, IV 2020, 'Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells', Semiconductors, vol. 54, no. 11, pp. 1503-1505. https://doi.org/10.1134/S1063782620110135

APA

Khramtsov, E. S., Gribakin, B. F., Trifonov, A. V., & Ignatiev, I. V. (2020). Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells. Semiconductors, 54(11), 1503-1505. https://doi.org/10.1134/S1063782620110135

Vancouver

Khramtsov ES, Gribakin BF, Trifonov AV, Ignatiev IV. Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells. Semiconductors. 2020;54(11):1503-1505. https://doi.org/10.1134/S1063782620110135

Author

Khramtsov, E. S. ; Gribakin, B. F. ; Trifonov, A. V. ; Ignatiev, I. V. . / Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells. In: Semiconductors. 2020 ; Vol. 54, No. 11. pp. 1503-1505.

BibTeX

@article{49bba1456ac34962a4520caa164df6fc,
title = "Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells",
abstract = "In this work, we study the exchange interactions between two excitons in the GaAs/AlGaAs quantum wells of various widths. We numerically solved the Schr{\"o}dinger equation for an exciton in a quantum well to find the two-exciton wave functions and to calculate the exchange integral. The results suggest that the strongest interactions between excitons occur in the quantum wells of widths of about 40–50 nm, with the exchange energy being of about of 9 μeV for an exciton density of 1/μm2.",
keywords = "quantum wells, exciton, exchange interaction",
author = "Khramtsov, {E. S.} and Gribakin, {B. F.} and Trifonov, {A. V.} and Ignatiev, {I. V.}",
note = "Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd.; null ; Conference date: 28-09-2020 Through 02-10-2020",
year = "2020",
doi = "10.1134/S1063782620110135",
language = "English",
volume = "54",
pages = "1503--1505",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "11",
url = "http://www.ioffe.ru/NANO2020/index.php?row=0&subrow=0&lang=en",

}

RIS

TY - JOUR

T1 - Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells

AU - Khramtsov, E. S.

AU - Gribakin, B. F.

AU - Trifonov, A. V.

AU - Ignatiev, I. V.

N1 - Conference code: 28

PY - 2020

Y1 - 2020

N2 - In this work, we study the exchange interactions between two excitons in the GaAs/AlGaAs quantum wells of various widths. We numerically solved the Schrödinger equation for an exciton in a quantum well to find the two-exciton wave functions and to calculate the exchange integral. The results suggest that the strongest interactions between excitons occur in the quantum wells of widths of about 40–50 nm, with the exchange energy being of about of 9 μeV for an exciton density of 1/μm2.

AB - In this work, we study the exchange interactions between two excitons in the GaAs/AlGaAs quantum wells of various widths. We numerically solved the Schrödinger equation for an exciton in a quantum well to find the two-exciton wave functions and to calculate the exchange integral. The results suggest that the strongest interactions between excitons occur in the quantum wells of widths of about 40–50 nm, with the exchange energy being of about of 9 μeV for an exciton density of 1/μm2.

KW - quantum wells

KW - exciton

KW - exchange interaction

UR - https://link.springer.com/article/10.1134/S1063782620110135

UR - http://www.scopus.com/inward/record.url?scp=85094904093&partnerID=8YFLogxK

U2 - 10.1134/S1063782620110135

DO - 10.1134/S1063782620110135

M3 - Conference article

VL - 54

SP - 1503

EP - 1505

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

Y2 - 28 September 2020 through 2 October 2020

ER -

ID: 70632392