Model for nucleation of catalyst-free III-V nanowires on patterned substrates

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Model for nucleation of catalyst-free III-V nanowires on patterned substrates. / Berdnikov, Y.; Sokolovskii, A. S.; Sibirev, N. V.

In: Journal of Physics: Conference Series, Vol. 1482, No. 1, 012030, 25.03.2020.

Research output: Contribution to journal › Conference article › peer-review

BibTeX

@article{ed333eeb77ba4f13a583a47dbe8252c0,

title = "Model for nucleation of catalyst-free III-V nanowires on patterned substrates",

abstract = "Catalyst-free growth of III-V nanowires enables different optoelectronic applications though usually requires substrate patterning to control the size and position of nanowires. However, the impact of substrate modification on the nanowire nucleation is not well-understood yet. The theoretical approach of this work studies the effect of substrate boundaries and adatom diffusion on the nucleation rate of catalyst-free III-V NWs on substrates with circularly symmetric patterning. In the model results, we distinguish and demonstrate four different scenarios of nanowire nucleation, depending on the properties of the patterned and unpatterned surfaces.",

author = "Y. Berdnikov and Sokolovskii, {A. S.} and Sibirev, {N. V.}",

note = "Publisher Copyright: {\textcopyright} 2019 Published under licence by IOP Publishing Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 ; Conference date: 25-11-2019 Through 29-11-2019",

year = "2020",

month = mar,

day = "25",

doi = "10.1088/1742-6596/1482/1/012030",

language = "English",

volume = "1482",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

RIS

TY - JOUR

T1 - Model for nucleation of catalyst-free III-V nanowires on patterned substrates

AU - Berdnikov, Y.

AU - Sokolovskii, A. S.

AU - Sibirev, N. V.

PY - 2020/3/25

Y1 - 2020/3/25

N2 - Catalyst-free growth of III-V nanowires enables different optoelectronic applications though usually requires substrate patterning to control the size and position of nanowires. However, the impact of substrate modification on the nanowire nucleation is not well-understood yet. The theoretical approach of this work studies the effect of substrate boundaries and adatom diffusion on the nucleation rate of catalyst-free III-V NWs on substrates with circularly symmetric patterning. In the model results, we distinguish and demonstrate four different scenarios of nanowire nucleation, depending on the properties of the patterned and unpatterned surfaces.

AB - Catalyst-free growth of III-V nanowires enables different optoelectronic applications though usually requires substrate patterning to control the size and position of nanowires. However, the impact of substrate modification on the nanowire nucleation is not well-understood yet. The theoretical approach of this work studies the effect of substrate boundaries and adatom diffusion on the nucleation rate of catalyst-free III-V NWs on substrates with circularly symmetric patterning. In the model results, we distinguish and demonstrate four different scenarios of nanowire nucleation, depending on the properties of the patterned and unpatterned surfaces.

UR - http://www.scopus.com/inward/record.url?scp=85082991426&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1482/1/012030

DO - 10.1088/1742-6596/1482/1/012030

M3 - Conference article

AN - SCOPUS:85082991426

VL - 1482

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012030

T2 - 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019

Y2 - 25 November 2019 through 29 November 2019

ER -

ID: 70874910