The results of investigations into interfaces and thin films in heterostructures with the use of spherical-aberration-corrected transmission and scanning transmission electron microscopy (STEM) by applying supersensitive energy-dispersion X-ray microanalysis are presented. Using examples of heterostructures of various materials (Si/Ge, InGaAs/InAs, AlN/GaN, YBCO on various substrates and LuFe(Co)O3/YSZ), the possibility of determining the morphology and atomic structure of interfaces and mechanisms of the formation of layers is shown.
| Original language | English |
|---|---|
| Pages (from-to) | 317-327 |
| Number of pages | 11 |
| Journal | Nanotechnologies in Russia |
| Volume | 8 |
| Issue number | 5-6 |
| DOIs | |
| State | Published - May 2013 |
| Externally published | Yes |
ID: 88210126