Standard

Microscopic model for the stacking-fault potential and the exciton wave function in GaAs. / Durnev, Mikhail; Glazov, Mikhail M.; Linpeng, Xiayu; Viitaniemi, Maria L. K.; Matthews, Bethany; Spurgeon, Steven R.; Sushko, P.; Wieck, Andreas D.; Ludwig, Arne; Fu, Kai-Mei C.

In: Physical Review B, Vol. 101, No. 12, 125420, 15.03.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Durnev, M, Glazov, MM, Linpeng, X, Viitaniemi, MLK, Matthews, B, Spurgeon, SR, Sushko, P, Wieck, AD, Ludwig, A & Fu, K-MC 2020, 'Microscopic model for the stacking-fault potential and the exciton wave function in GaAs', Physical Review B, vol. 101, no. 12, 125420. https://doi.org/10.1103/PhysRevB.101.125420

APA

Durnev, M., Glazov, M. M., Linpeng, X., Viitaniemi, M. L. K., Matthews, B., Spurgeon, S. R., Sushko, P., Wieck, A. D., Ludwig, A., & Fu, K-M. C. (2020). Microscopic model for the stacking-fault potential and the exciton wave function in GaAs. Physical Review B, 101(12), [125420]. https://doi.org/10.1103/PhysRevB.101.125420

Vancouver

Durnev M, Glazov MM, Linpeng X, Viitaniemi MLK, Matthews B, Spurgeon SR et al. Microscopic model for the stacking-fault potential and the exciton wave function in GaAs. Physical Review B. 2020 Mar 15;101(12). 125420. https://doi.org/10.1103/PhysRevB.101.125420

Author

Durnev, Mikhail ; Glazov, Mikhail M. ; Linpeng, Xiayu ; Viitaniemi, Maria L. K. ; Matthews, Bethany ; Spurgeon, Steven R. ; Sushko, P. ; Wieck, Andreas D. ; Ludwig, Arne ; Fu, Kai-Mei C. / Microscopic model for the stacking-fault potential and the exciton wave function in GaAs. In: Physical Review B. 2020 ; Vol. 101, No. 12.

BibTeX

@article{e49fa9031d794c90a4e443e9012b7fb7,
title = "Microscopic model for the stacking-fault potential and the exciton wave function in GaAs",
abstract = "Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density-functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.",
keywords = "FIELD",
author = "Mikhail Durnev and Glazov, {Mikhail M.} and Xiayu Linpeng and Viitaniemi, {Maria L. K.} and Bethany Matthews and Spurgeon, {Steven R.} and P. Sushko and Wieck, {Andreas D.} and Arne Ludwig and Fu, {Kai-Mei C.}",
year = "2020",
month = mar,
day = "15",
doi = "10.1103/PhysRevB.101.125420",
language = "Английский",
volume = "101",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Microscopic model for the stacking-fault potential and the exciton wave function in GaAs

AU - Durnev, Mikhail

AU - Glazov, Mikhail M.

AU - Linpeng, Xiayu

AU - Viitaniemi, Maria L. K.

AU - Matthews, Bethany

AU - Spurgeon, Steven R.

AU - Sushko, P.

AU - Wieck, Andreas D.

AU - Ludwig, Arne

AU - Fu, Kai-Mei C.

PY - 2020/3/15

Y1 - 2020/3/15

N2 - Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density-functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.

AB - Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density-functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.

KW - FIELD

UR - http://www.scopus.com/inward/record.url?scp=85083400848&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.101.125420

DO - 10.1103/PhysRevB.101.125420

M3 - статья

VL - 101

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 12

M1 - 125420

ER -

ID: 52899467