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Metal-organic framework single crystal for in-memory neuromorphic computing with a light control. / Bachinin, Semyon V.; Marunchenko, Alexandr; Matchenya, Ivan; Zhestkij, Nikolai; Shirobokov, Vladimir; Gunina, Ekaterina; Novikov, Alexander; Timofeeva, Maria; Povarov, Svyatoslav A.; Li, Fengting; Milichko, Valentin A.

In: Communications Materials, Vol. 5, No. 1, 128, 01.12.2024.

Research output: Contribution to journal › Article › peer-review

Harvard

Bachinin, SV, Marunchenko, A, Matchenya, I, Zhestkij, N, Shirobokov, V, Gunina, E, Novikov, A, Timofeeva, M, Povarov, SA, Li, F & Milichko, VA 2024, 'Metal-organic framework single crystal for in-memory neuromorphic computing with a light control', Communications Materials, vol. 5, no. 1, 128. https://doi.org/10.1038/s43246-024-00573-6

APA

Bachinin, S. V., Marunchenko, A., Matchenya, I., Zhestkij, N., Shirobokov, V., Gunina, E., Novikov, A., Timofeeva, M., Povarov, S. A., Li, F., & Milichko, V. A. (2024). Metal-organic framework single crystal for in-memory neuromorphic computing with a light control. Communications Materials, 5(1), [128]. https://doi.org/10.1038/s43246-024-00573-6

Vancouver

Bachinin SV, Marunchenko A, Matchenya I, Zhestkij N, Shirobokov V, Gunina E et al. Metal-organic framework single crystal for in-memory neuromorphic computing with a light control. Communications Materials. 2024 Dec 1;5(1). 128. https://doi.org/10.1038/s43246-024-00573-6

Author

Bachinin, Semyon V. ; Marunchenko, Alexandr ; Matchenya, Ivan ; Zhestkij, Nikolai ; Shirobokov, Vladimir ; Gunina, Ekaterina ; Novikov, Alexander ; Timofeeva, Maria ; Povarov, Svyatoslav A. ; Li, Fengting ; Milichko, Valentin A. / Metal-organic framework single crystal for in-memory neuromorphic computing with a light control. In: Communications Materials. 2024 ; Vol. 5, No. 1.

BibTeX

@article{0d665caf241841d2b7235503ff4a7ab7,
title = "Metal-organic framework single crystal for in-memory neuromorphic computing with a light control",
abstract = "Neuromorphic architectures, expanding the limits of computing from conventional data processing and storage to advanced cognition, learning, and in-memory computing, impose restrictions on materials that should operate fast, energy efficiently, and highly endurant. Here we report on in-memory computing architecture based on metal-organic framework (MOF) single crystal with a light control. We demonstrate that the MOF with inherent memristive behavior (for data storage) changes nonlinearly its electric response when irradiated by light. This leads to three and more electronic states (spikes) with 81 ms duration and 1 s refractory time, allowing to implement 40 bits s−1 optoelectronic data processing. Next, the architecture is switched to the neuromorphic state upon the action of a set of laser pulses, providing the text recognition over 50 times with app. 100% accuracy. Thereby, simultaneous data storage, processing, and neuromorphic computing on MOF, driven by light, pave the way for multifunctional in-memory computing architectures.",
author = "Bachinin, {Semyon V.} and Alexandr Marunchenko and Ivan Matchenya and Nikolai Zhestkij and Vladimir Shirobokov and Ekaterina Gunina and Alexander Novikov and Maria Timofeeva and Povarov, {Svyatoslav A.} and Fengting Li and Milichko, {Valentin A.}",
year = "2024",
month = dec,
day = "1",
doi = "10.1038/s43246-024-00573-6",
language = "English",
volume = "5",
journal = "Communications Materials",
issn = "2662-4443",
publisher = "Springer Nature",
number = "1",

}

RIS

TY - JOUR

T1 - Metal-organic framework single crystal for in-memory neuromorphic computing with a light control

AU - Bachinin, Semyon V.

AU - Marunchenko, Alexandr

AU - Matchenya, Ivan

AU - Zhestkij, Nikolai

AU - Shirobokov, Vladimir

AU - Gunina, Ekaterina

AU - Novikov, Alexander

AU - Timofeeva, Maria

AU - Povarov, Svyatoslav A.

AU - Li, Fengting

AU - Milichko, Valentin A.

PY - 2024/12/1

Y1 - 2024/12/1

N2 - Neuromorphic architectures, expanding the limits of computing from conventional data processing and storage to advanced cognition, learning, and in-memory computing, impose restrictions on materials that should operate fast, energy efficiently, and highly endurant. Here we report on in-memory computing architecture based on metal-organic framework (MOF) single crystal with a light control. We demonstrate that the MOF with inherent memristive behavior (for data storage) changes nonlinearly its electric response when irradiated by light. This leads to three and more electronic states (spikes) with 81 ms duration and 1 s refractory time, allowing to implement 40 bits s−1 optoelectronic data processing. Next, the architecture is switched to the neuromorphic state upon the action of a set of laser pulses, providing the text recognition over 50 times with app. 100% accuracy. Thereby, simultaneous data storage, processing, and neuromorphic computing on MOF, driven by light, pave the way for multifunctional in-memory computing architectures.

AB - Neuromorphic architectures, expanding the limits of computing from conventional data processing and storage to advanced cognition, learning, and in-memory computing, impose restrictions on materials that should operate fast, energy efficiently, and highly endurant. Here we report on in-memory computing architecture based on metal-organic framework (MOF) single crystal with a light control. We demonstrate that the MOF with inherent memristive behavior (for data storage) changes nonlinearly its electric response when irradiated by light. This leads to three and more electronic states (spikes) with 81 ms duration and 1 s refractory time, allowing to implement 40 bits s−1 optoelectronic data processing. Next, the architecture is switched to the neuromorphic state upon the action of a set of laser pulses, providing the text recognition over 50 times with app. 100% accuracy. Thereby, simultaneous data storage, processing, and neuromorphic computing on MOF, driven by light, pave the way for multifunctional in-memory computing architectures.

UR - https://www.mendeley.com/catalogue/6888ed1a-9296-3b28-a950-7a3f4e865d28/

U2 - 10.1038/s43246-024-00573-6

DO - 10.1038/s43246-024-00573-6

M3 - Article

VL - 5

JO - Communications Materials

JF - Communications Materials

SN - 2662-4443

IS - 1

M1 - 128

ER -

ID: 121978767