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Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2. / Филатова, Елена Олеговна; Конашук, Алексей Сергеевич; Сахоненков, Сергей Сергеевич; Гайсин, Айдар Уралович; Kolomiiets, Nadiia M. ; Afanas'ev, Valeri V.; Dekkers, Harold F. W. .

In: Journal of Physical Chemistry C, Vol. 124, No. 28, 124, 28, 16.07.2020, p. 15547–15557.

Research output: Contribution to journal › Article › peer-review

Harvard

Филатова, ЕО, Конашук, АС, Сахоненков, СС, Гайсин, АУ, Kolomiiets, NM, Afanas'ev, VV & Dekkers, HFW 2020, 'Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2', Journal of Physical Chemistry C, vol. 124, no. 28, 124, 28, pp. 15547–15557. https://doi.org/10.1021/acs.jpcc.0c03605

APA

Филатова, Е. О., Конашук, А. С., Сахоненков, С. С., Гайсин, А. У., Kolomiiets, N. M., Afanas'ev, V. V., & Dekkers, H. F. W. (2020). Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2. Journal of Physical Chemistry C, 124(28), 15547–15557. [124, 28]. https://doi.org/10.1021/acs.jpcc.0c03605

Vancouver

Филатова ЕО, Конашук АС, Сахоненков СС, Гайсин АУ, Kolomiiets NM, Afanas'ev VV et al. Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2. Journal of Physical Chemistry C. 2020 Jul 16;124(28):15547–15557. 124, 28. https://doi.org/10.1021/acs.jpcc.0c03605

Author

Филатова, Елена Олеговна ; Конашук, Алексей Сергеевич ; Сахоненков, Сергей Сергеевич ; Гайсин, Айдар Уралович ; Kolomiiets, Nadiia M. ; Afanas'ev, Valeri V. ; Dekkers, Harold F. W. . / Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2. In: Journal of Physical Chemistry C. 2020 ; Vol. 124, No. 28. pp. 15547–15557.

BibTeX

@article{18b2b0b917bf4dac960f8f1a8193f643,
title = "Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2",
abstract = "ABSTRACT: By use of a combination of electrical measurements andinternal photoemission interface barrier characterization, the effectiveworkfunction (EWF) changes of nm-thin TiN layer deposited on topof oxide insulators (SiO2, HfO2) have been correlated with atomic andchemical composition of the metal/oxide interfaces characterized byphotoelectron spectroscopy and X-ray absorption. The majormechanisms of the EWF tuning are shown to be correlated toredistribution of light N and O atoms. Oxygen scavenging from theunderlying oxides changes the TiN EWF by forming a Ti oxynitridelayer at the interface and introducing charge traps in the near-interfaceoxide layer. By contrast, significant (≈1 eV) reduction of EWF can beachieved by introduction of a thin TiAl getter layer on top of TiN film.The mechanism of this reduction can be traced to formation of metallic Ti caused by nitrogen scavenging by TiAl as evidenced byAlN formation.",
keywords = "ALD, DEPOSITION, INITIAL OXIDATION, MODULATION, PHOTOELECTRON-SPECTROSCOPY, THIN-FILMS, TITANIUM NITRIDE, X-RAY-ABSORPTION, XPS",
author = "Филатова, {Елена Олеговна} and Конашук, {Алексей Сергеевич} and Сахоненков, {Сергей Сергеевич} and Гайсин, {Айдар Уралович} and Kolomiiets, {Nadiia M.} and Afanas'ev, {Valeri V.} and Dekkers, {Harold F. W.}",
note = "Publisher Copyright: Copyright {\textcopyright} 2020 American Chemical Society.",
year = "2020",
month = jul,
day = "16",
doi = "10.1021/acs.jpcc.0c03605",
language = "English",
volume = "124",
pages = "15547–15557",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "28",

}

RIS

TY - JOUR

T1 - Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2

AU - Филатова, Елена Олеговна

AU - Конашук, Алексей Сергеевич

AU - Сахоненков, Сергей Сергеевич

AU - Гайсин, Айдар Уралович

AU - Kolomiiets, Nadiia M.

AU - Afanas'ev, Valeri V.

AU - Dekkers, Harold F. W.

N1 - Publisher Copyright: Copyright © 2020 American Chemical Society.

PY - 2020/7/16

Y1 - 2020/7/16

N2 - ABSTRACT: By use of a combination of electrical measurements andinternal photoemission interface barrier characterization, the effectiveworkfunction (EWF) changes of nm-thin TiN layer deposited on topof oxide insulators (SiO2, HfO2) have been correlated with atomic andchemical composition of the metal/oxide interfaces characterized byphotoelectron spectroscopy and X-ray absorption. The majormechanisms of the EWF tuning are shown to be correlated toredistribution of light N and O atoms. Oxygen scavenging from theunderlying oxides changes the TiN EWF by forming a Ti oxynitridelayer at the interface and introducing charge traps in the near-interfaceoxide layer. By contrast, significant (≈1 eV) reduction of EWF can beachieved by introduction of a thin TiAl getter layer on top of TiN film.The mechanism of this reduction can be traced to formation of metallic Ti caused by nitrogen scavenging by TiAl as evidenced byAlN formation.

AB - ABSTRACT: By use of a combination of electrical measurements andinternal photoemission interface barrier characterization, the effectiveworkfunction (EWF) changes of nm-thin TiN layer deposited on topof oxide insulators (SiO2, HfO2) have been correlated with atomic andchemical composition of the metal/oxide interfaces characterized byphotoelectron spectroscopy and X-ray absorption. The majormechanisms of the EWF tuning are shown to be correlated toredistribution of light N and O atoms. Oxygen scavenging from theunderlying oxides changes the TiN EWF by forming a Ti oxynitridelayer at the interface and introducing charge traps in the near-interfaceoxide layer. By contrast, significant (≈1 eV) reduction of EWF can beachieved by introduction of a thin TiAl getter layer on top of TiN film.The mechanism of this reduction can be traced to formation of metallic Ti caused by nitrogen scavenging by TiAl as evidenced byAlN formation.

KW - ALD

KW - DEPOSITION

KW - INITIAL OXIDATION

KW - MODULATION

KW - PHOTOELECTRON-SPECTROSCOPY

KW - THIN-FILMS

KW - TITANIUM NITRIDE

KW - X-RAY-ABSORPTION

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=85089280538&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/233c594b-382f-3133-b098-895946997e7e/

U2 - 10.1021/acs.jpcc.0c03605

DO - 10.1021/acs.jpcc.0c03605

M3 - Article

VL - 124

SP - 15547

EP - 15557

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 28

M1 - 124, 28

ER -

ID: 61291460