Research output: Contribution to journal › Article
Measuring femtosecond lifetimes of free charge carriers in gallium arsenide. / Levashova, A.E.; Pastor, A.A.; Serdobintsev, P.Y.; Chaldyshev, V.V.
In: Technical Physics Letters, Vol. 40, No. 6, 2014, p. 513-515.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Measuring femtosecond lifetimes of free charge carriers in gallium arsenide
AU - Levashova, A.E.
AU - Pastor, A.A.
AU - Serdobintsev, P.Y.
AU - Chaldyshev, V.V.
PY - 2014
Y1 - 2014
N2 - Peculiarities of the measurement of femtosecond lifetimes of free charge carriers in gallium arsenide grown by the method of molecular beam epitaxy are considered. The carrier lifetime is determined by a variant of the pump-probe method in which the pumping and probing radiation beams are incident onto the semiconductor sample surface at the Brewster angle. The proposed variant ensures the detection of a change in the induced refractive index even in the case of very small response signals, thus providing for a high sensitivity of measurements. It is shown that the relative signal changes near the Brewster angle reach a maximum level.
AB - Peculiarities of the measurement of femtosecond lifetimes of free charge carriers in gallium arsenide grown by the method of molecular beam epitaxy are considered. The carrier lifetime is determined by a variant of the pump-probe method in which the pumping and probing radiation beams are incident onto the semiconductor sample surface at the Brewster angle. The proposed variant ensures the detection of a change in the induced refractive index even in the case of very small response signals, thus providing for a high sensitivity of measurements. It is shown that the relative signal changes near the Brewster angle reach a maximum level.
U2 - 10.1134/S1063785014060224
DO - 10.1134/S1063785014060224
M3 - Article
VL - 40
SP - 513
EP - 515
JO - Technical Physics Letters
JF - Technical Physics Letters
SN - 1063-7850
IS - 6
ER -
ID: 7039340