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MBE-Grown In xGa1– xAs Nanowires with 50% Composition. / Dubrovskii, V. G.; Reznik, R. R.; Kryzhanovskaya, N. V.; Shtrom, I. V.; Ubyivovk, E. D.; Soshnikov, I. P.; Cirlin, G. E.

In: Semiconductors, Vol. 54, No. 6, 01.06.2020, p. 650-653.

Research output: Contribution to journal › Article › peer-review

Harvard

Dubrovskii, VG, Reznik, RR, Kryzhanovskaya, NV, Shtrom, IV, Ubyivovk, ED, Soshnikov, IP & Cirlin, GE 2020, 'MBE-Grown In xGa1– xAs Nanowires with 50% Composition', Semiconductors, vol. 54, no. 6, pp. 650-653. https://doi.org/10.1134/S1063782620060056, https://doi.org/10.1134/S1063782620060056

APA

Dubrovskii, V. G., Reznik, R. R., Kryzhanovskaya, N. V., Shtrom, I. V., Ubyivovk, E. D., Soshnikov, I. P., & Cirlin, G. E. (2020). MBE-Grown In xGa1– xAs Nanowires with 50% Composition. Semiconductors, 54(6), 650-653. https://doi.org/10.1134/S1063782620060056, https://doi.org/10.1134/S1063782620060056

Vancouver

Dubrovskii VG, Reznik RR, Kryzhanovskaya NV, Shtrom IV, Ubyivovk ED, Soshnikov IP et al. MBE-Grown In xGa1– xAs Nanowires with 50% Composition. Semiconductors. 2020 Jun 1;54(6):650-653. https://doi.org/10.1134/S1063782620060056, https://doi.org/10.1134/S1063782620060056

Author

Dubrovskii, V. G. ; Reznik, R. R. ; Kryzhanovskaya, N. V. ; Shtrom, I. V. ; Ubyivovk, E. D. ; Soshnikov, I. P. ; Cirlin, G. E. / MBE-Grown In xGa1– xAs Nanowires with 50% Composition. In: Semiconductors. 2020 ; Vol. 54, No. 6. pp. 650-653.

BibTeX

@article{17648b86fbb041f39099d9b28462bc3c,
title = "MBE-Grown In xGa1– xAs Nanowires with 50% Composition",
abstract = "In a particular case of Au-catalyzed InxGa1 -xAs nanowires, wide compositional tuning has been obtained using metal organic vapor-phase epitaxy, which remains difficult for molecular beam epitaxy. InxGa1 -xAs nanowires are demonstrated withx= 0.5, grown by Au-catalyzed molecular beam epitaxy via the vapor-solid-solid mode at a low temperature of 220 degrees C. Low-temperature growth suppresses re-evaporation of indium and gallium atoms and their surface diffusion, which is why the composition of ternary nanowires is precisely determined by the indium content in vapor. This method can be used for compositional tuning of other ternary III-V and III-N nanowires grown by molecular beam epitaxy.",
keywords = "composition, InGaAs nanowires, miscibility gap, molecular beam epitaxy, HETEROSTRUCTURES, TERNARY, INGAAS NANOWIRES, III-V NANOWIRES",
author = "Dubrovskii, {V. G.} and Reznik, {R. R.} and Kryzhanovskaya, {N. V.} and Shtrom, {I. V.} and Ubyivovk, {E. D.} and Soshnikov, {I. P.} and Cirlin, {G. E.}",
year = "2020",
month = jun,
day = "1",
doi = "10.1134/S1063782620060056",
language = "English",
volume = "54",
pages = "650--653",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "6",

}

RIS

TY - JOUR

T1 - MBE-Grown In xGa1– xAs Nanowires with 50% Composition

AU - Dubrovskii, V. G.

AU - Reznik, R. R.

AU - Kryzhanovskaya, N. V.

AU - Shtrom, I. V.

AU - Ubyivovk, E. D.

AU - Soshnikov, I. P.

AU - Cirlin, G. E.

PY - 2020/6/1

Y1 - 2020/6/1

N2 - In a particular case of Au-catalyzed InxGa1 -xAs nanowires, wide compositional tuning has been obtained using metal organic vapor-phase epitaxy, which remains difficult for molecular beam epitaxy. InxGa1 -xAs nanowires are demonstrated withx= 0.5, grown by Au-catalyzed molecular beam epitaxy via the vapor-solid-solid mode at a low temperature of 220 degrees C. Low-temperature growth suppresses re-evaporation of indium and gallium atoms and their surface diffusion, which is why the composition of ternary nanowires is precisely determined by the indium content in vapor. This method can be used for compositional tuning of other ternary III-V and III-N nanowires grown by molecular beam epitaxy.

AB - In a particular case of Au-catalyzed InxGa1 -xAs nanowires, wide compositional tuning has been obtained using metal organic vapor-phase epitaxy, which remains difficult for molecular beam epitaxy. InxGa1 -xAs nanowires are demonstrated withx= 0.5, grown by Au-catalyzed molecular beam epitaxy via the vapor-solid-solid mode at a low temperature of 220 degrees C. Low-temperature growth suppresses re-evaporation of indium and gallium atoms and their surface diffusion, which is why the composition of ternary nanowires is precisely determined by the indium content in vapor. This method can be used for compositional tuning of other ternary III-V and III-N nanowires grown by molecular beam epitaxy.

KW - composition

KW - InGaAs nanowires

KW - miscibility gap

KW - molecular beam epitaxy

KW - HETEROSTRUCTURES

KW - TERNARY

KW - INGAAS NANOWIRES

KW - III-V NANOWIRES

UR - http://www.scopus.com/inward/record.url?scp=85085877320&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/bedc52f9-dead-3fee-b33f-6ba2c6d5c4a8/

U2 - 10.1134/S1063782620060056

DO - 10.1134/S1063782620060056

M3 - Article

AN - SCOPUS:85085877320

VL - 54

SP - 650

EP - 653

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 6

ER -

ID: 54300114