MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

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MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate. / Reznik, R. R.; Kotlyar, K. P.; Shtrom, I. V.; Soshnikov, I. P.; Kukushkin, S. A.; Osipov, A. V.; Cirlin, G. E.

In: Semiconductors, Vol. 51, No. 11, 01.11.2017, p. 1472-1476.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{0568631eb2654c3e8bf38d67b4f6a656,

title = "MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate",

abstract = "The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of these NWs is smaller than that of similar NWs grown on a silicon substrate. In particular, the minimum diameter is less than 10 nm for InAs NWs. In addition, it was assumed on the basis of photoluminescence measurements that, when AlGaAs NWs are grown on these substrates, a complex structure is formed due to the self-organized formation of AlGaAs quantum dots with a lower content of aluminum, embedded in the NWs.",

author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Shtrom, {I. V.} and Soshnikov, {I. P.} and Kukushkin, {S. A.} and Osipov, {A. V.} and Cirlin, {G. E.}",

note = "Publisher Copyright: {\textcopyright} 2017, Pleiades Publishing, Ltd.",

year = "2017",

month = nov,

day = "1",

doi = "10.1134/S1063782617110252",

language = "English",

volume = "51",

pages = "1472--1476",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "11",

}

RIS

TY - JOUR

T1 - MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Shtrom, I. V.

AU - Soshnikov, I. P.

AU - Kukushkin, S. A.

AU - Osipov, A. V.

AU - Cirlin, G. E.

PY - 2017/11/1

Y1 - 2017/11/1

N2 - The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of these NWs is smaller than that of similar NWs grown on a silicon substrate. In particular, the minimum diameter is less than 10 nm for InAs NWs. In addition, it was assumed on the basis of photoluminescence measurements that, when AlGaAs NWs are grown on these substrates, a complex structure is formed due to the self-organized formation of AlGaAs quantum dots with a lower content of aluminum, embedded in the NWs.

AB - The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of these NWs is smaller than that of similar NWs grown on a silicon substrate. In particular, the minimum diameter is less than 10 nm for InAs NWs. In addition, it was assumed on the basis of photoluminescence measurements that, when AlGaAs NWs are grown on these substrates, a complex structure is formed due to the self-organized formation of AlGaAs quantum dots with a lower content of aluminum, embedded in the NWs.

UR - http://www.scopus.com/inward/record.url?scp=85035027796&partnerID=8YFLogxK

U2 - 10.1134/S1063782617110252

DO - 10.1134/S1063782617110252

M3 - Article

AN - SCOPUS:85035027796

VL - 51

SP - 1472

EP - 1476

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 99721641