MBE growth and properties of GaAs, AlGaAs and InAs nanowires on SiC/Si(111) hybrid substrate

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MBE growth and properties of GaAs, AlGaAs and InAs nanowires on SiC/Si(111) hybrid substrate. / Reznik, R. R.; Shtrom, I. V.; Soshnikov, I. P.; Kukushkin, S. A.; Kirilenko, D. A.; Cirlin, G. E.

In: Journal of Physics: Conference Series, Vol. 1135, No. 1, 012036, 20.12.2018.

Research output: Contribution to journal › Conference article › peer-review

BibTeX

@article{f97ef5f2318f4b919e7d8dc08b8a9b5d,

title = "MBE growth and properties of GaAs, AlGaAs and InAs nanowires on SiC/Si(111) hybrid substrate",

abstract = "The possibility of GaAs, AlGaAs and InAs nanowires MBE growth on a silicon substrate with a nanometer silicon carbide buffer layer has been demonstrated for the first time. Under the same experimental conditions (including the same composition) the diameter of the nanowires is smaller than diameter of nanowires grown on silicon substrate. Based on the photoluminescence and TEM analysis it was suggest that when AlGaAs/SiC/Si NWs are grown, a physical complex structure is formed.",

author = "Reznik, {R. R.} and Shtrom, {I. V.} and Soshnikov, {I. P.} and Kukushkin, {S. A.} and Kirilenko, {D. A.} and Cirlin, {G. E.}",

note = "Publisher Copyright: {\textcopyright} 2018 by IOP Publishing Ltd.; International Conference PhysicA.SPb 2018 ; Conference date: 23-10-2018 Through 25-10-2018",

year = "2018",

month = dec,

day = "20",

doi = "10.1088/1742-6596/1135/1/012036",

language = "English",

volume = "1135",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

RIS

TY - JOUR

T1 - MBE growth and properties of GaAs, AlGaAs and InAs nanowires on SiC/Si(111) hybrid substrate

AU - Reznik, R. R.

AU - Shtrom, I. V.

AU - Soshnikov, I. P.

AU - Kukushkin, S. A.

AU - Kirilenko, D. A.

AU - Cirlin, G. E.

PY - 2018/12/20

Y1 - 2018/12/20

N2 - The possibility of GaAs, AlGaAs and InAs nanowires MBE growth on a silicon substrate with a nanometer silicon carbide buffer layer has been demonstrated for the first time. Under the same experimental conditions (including the same composition) the diameter of the nanowires is smaller than diameter of nanowires grown on silicon substrate. Based on the photoluminescence and TEM analysis it was suggest that when AlGaAs/SiC/Si NWs are grown, a physical complex structure is formed.

AB - The possibility of GaAs, AlGaAs and InAs nanowires MBE growth on a silicon substrate with a nanometer silicon carbide buffer layer has been demonstrated for the first time. Under the same experimental conditions (including the same composition) the diameter of the nanowires is smaller than diameter of nanowires grown on silicon substrate. Based on the photoluminescence and TEM analysis it was suggest that when AlGaAs/SiC/Si NWs are grown, a physical complex structure is formed.

UR - http://www.scopus.com/inward/record.url?scp=85059374367&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1135/1/012036

DO - 10.1088/1742-6596/1135/1/012036

M3 - Conference article

AN - SCOPUS:85059374367

VL - 1135

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012036

T2 - International Conference PhysicA.SPb 2018

Y2 - 23 October 2018 through 25 October 2018

ER -

ID: 98507270