Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
Mathematical model and design of nanoeloctronic device based on metal-dielectric transition. / Dmitrieva, Ludmila A.; Kuperin, Yuri A.; Rudin, German E.
Proceedings of the International Conference Days on Diffraction 2007, DD. 2007. p. 38-44 4531986 (Proceedings of the International Conference Days on Diffraction 2007, DD).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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TY - GEN
T1 - Mathematical model and design of nanoeloctronic device based on metal-dielectric transition
AU - Dmitrieva, Ludmila A.
AU - Kuperin, Yuri A.
AU - Rudin, German E.
PY - 2007
Y1 - 2007
N2 - A new type of nanoelectronic device based on stimulated Peierls-Mott transition is studied analytically and numerically. By means of conformal mappings a quantum mechanical potential for ballistic electrons moving on the conducting electrode has been calculated in terms of elliptic functions. The latter are parameterized by the geometrical characteristics of the nano-device and the governing voltage applied. The spectral zone structure of the effective Schrödinger operator has been calculated numerically for various sets of the device parameters. For the device fabricated from GaAs semiconductor the set of parameters which guarantee the stable metal-dielectric transition at liquid helium temperature has been found.
AB - A new type of nanoelectronic device based on stimulated Peierls-Mott transition is studied analytically and numerically. By means of conformal mappings a quantum mechanical potential for ballistic electrons moving on the conducting electrode has been calculated in terms of elliptic functions. The latter are parameterized by the geometrical characteristics of the nano-device and the governing voltage applied. The spectral zone structure of the effective Schrödinger operator has been calculated numerically for various sets of the device parameters. For the device fabricated from GaAs semiconductor the set of parameters which guarantee the stable metal-dielectric transition at liquid helium temperature has been found.
UR - http://www.scopus.com/inward/record.url?scp=50249084000&partnerID=8YFLogxK
U2 - 10.1109/DD.2007.4531986
DO - 10.1109/DD.2007.4531986
M3 - Conference contribution
AN - SCOPUS:50249084000
SN - 596510118X
SN - 9785965101184
T3 - Proceedings of the International Conference Days on Diffraction 2007, DD
SP - 38
EP - 44
BT - Proceedings of the International Conference Days on Diffraction 2007, DD
T2 - International Conferences Days on Diffraction, DD
Y2 - 29 May 2007 through 1 June 2007
ER -
ID: 88949071