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Mathematical model and design of nanoeloctronic device based on metal-dielectric transition. / Dmitrieva, Ludmila A.; Kuperin, Yuri A.; Rudin, German E.

Proceedings of the International Conference Days on Diffraction 2007, DD. 2007. p. 38-44 4531986 (Proceedings of the International Conference Days on Diffraction 2007, DD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Harvard

Dmitrieva, LA, Kuperin, YA & Rudin, GE 2007, Mathematical model and design of nanoeloctronic device based on metal-dielectric transition. in Proceedings of the International Conference Days on Diffraction 2007, DD., 4531986, Proceedings of the International Conference Days on Diffraction 2007, DD, pp. 38-44, International Conferences Days on Diffraction, DD, St. Petersburg, Russian Federation, 29/05/07. https://doi.org/10.1109/DD.2007.4531986

APA

Dmitrieva, L. A., Kuperin, Y. A., & Rudin, G. E. (2007). Mathematical model and design of nanoeloctronic device based on metal-dielectric transition. In Proceedings of the International Conference Days on Diffraction 2007, DD (pp. 38-44). [4531986] (Proceedings of the International Conference Days on Diffraction 2007, DD). https://doi.org/10.1109/DD.2007.4531986

Vancouver

Dmitrieva LA, Kuperin YA, Rudin GE. Mathematical model and design of nanoeloctronic device based on metal-dielectric transition. In Proceedings of the International Conference Days on Diffraction 2007, DD. 2007. p. 38-44. 4531986. (Proceedings of the International Conference Days on Diffraction 2007, DD). https://doi.org/10.1109/DD.2007.4531986

Author

Dmitrieva, Ludmila A. ; Kuperin, Yuri A. ; Rudin, German E. / Mathematical model and design of nanoeloctronic device based on metal-dielectric transition. Proceedings of the International Conference Days on Diffraction 2007, DD. 2007. pp. 38-44 (Proceedings of the International Conference Days on Diffraction 2007, DD).

BibTeX

@inproceedings{fef4d81059c0462bbb51801b03f7a8be,
title = "Mathematical model and design of nanoeloctronic device based on metal-dielectric transition",
abstract = "A new type of nanoelectronic device based on stimulated Peierls-Mott transition is studied analytically and numerically. By means of conformal mappings a quantum mechanical potential for ballistic electrons moving on the conducting electrode has been calculated in terms of elliptic functions. The latter are parameterized by the geometrical characteristics of the nano-device and the governing voltage applied. The spectral zone structure of the effective Schr{\"o}dinger operator has been calculated numerically for various sets of the device parameters. For the device fabricated from GaAs semiconductor the set of parameters which guarantee the stable metal-dielectric transition at liquid helium temperature has been found.",
author = "Dmitrieva, {Ludmila A.} and Kuperin, {Yuri A.} and Rudin, {German E.}",
year = "2007",
doi = "10.1109/DD.2007.4531986",
language = "English",
isbn = "596510118X",
series = "Proceedings of the International Conference Days on Diffraction 2007, DD",
pages = "38--44",
booktitle = "Proceedings of the International Conference Days on Diffraction 2007, DD",
note = "International Conferences Days on Diffraction, DD ; Conference date: 29-05-2007 Through 01-06-2007",

}

RIS

TY - GEN

T1 - Mathematical model and design of nanoeloctronic device based on metal-dielectric transition

AU - Dmitrieva, Ludmila A.

AU - Kuperin, Yuri A.

AU - Rudin, German E.

PY - 2007

Y1 - 2007

N2 - A new type of nanoelectronic device based on stimulated Peierls-Mott transition is studied analytically and numerically. By means of conformal mappings a quantum mechanical potential for ballistic electrons moving on the conducting electrode has been calculated in terms of elliptic functions. The latter are parameterized by the geometrical characteristics of the nano-device and the governing voltage applied. The spectral zone structure of the effective Schrödinger operator has been calculated numerically for various sets of the device parameters. For the device fabricated from GaAs semiconductor the set of parameters which guarantee the stable metal-dielectric transition at liquid helium temperature has been found.

AB - A new type of nanoelectronic device based on stimulated Peierls-Mott transition is studied analytically and numerically. By means of conformal mappings a quantum mechanical potential for ballistic electrons moving on the conducting electrode has been calculated in terms of elliptic functions. The latter are parameterized by the geometrical characteristics of the nano-device and the governing voltage applied. The spectral zone structure of the effective Schrödinger operator has been calculated numerically for various sets of the device parameters. For the device fabricated from GaAs semiconductor the set of parameters which guarantee the stable metal-dielectric transition at liquid helium temperature has been found.

UR - http://www.scopus.com/inward/record.url?scp=50249084000&partnerID=8YFLogxK

U2 - 10.1109/DD.2007.4531986

DO - 10.1109/DD.2007.4531986

M3 - Conference contribution

AN - SCOPUS:50249084000

SN - 596510118X

SN - 9785965101184

T3 - Proceedings of the International Conference Days on Diffraction 2007, DD

SP - 38

EP - 44

BT - Proceedings of the International Conference Days on Diffraction 2007, DD

T2 - International Conferences Days on Diffraction, DD

Y2 - 29 May 2007 through 1 June 2007

ER -

ID: 88949071