TY - JOUR

T1 - Manipulation of the anomalous Hall effect in magnetic topological insulator heterostructure MnBi2Te4/Bi2Te3 by Si substrate surface engineering

AU - K. Ishihara,

AU - S. Ichinokura,

AU - S. V. Eremeev,

AU - T. T. Sasaki,

AU - R. Takada,

AU - H. Nishimichi,

AU - R. Akiyama,

AU - Чулков, Евгений Владимирович

AU - T. Hirahara,

N1 - В разделе ACKNOWLEDGMENTS указана благодарность проекту с указанием номером Pure ID заявки на проект: 116812735. На стадии финальных коррекций номер проекта будет заменен на актуальный - 125022702939-2

PY - 2025/11/24

Y1 - 2025/11/24

N2 - We developed an in situ Hall measurement setup and measured the anomalous Hall effect (AHE) in magnetic topological insulator heterostructures MnBi2Te4/Bi2Te3 grown on different Si(111) substrate surfaces. For the sample grown on the Si(111)- surface, the AHE signal appears at 15 K and becomes larger by further cooling, showing that the Curie temperature is 15 K. In contrast, although the is the same, the AHE signal shows a local maximum at 10 K for the sample grown on the -Bi/Si(111)- surface. A plausible explanation for this peculiar behavior is the enhanced skew scattering caused by the Bi layer, or the presence of the states localized at the interfacial Bi layer, which will affect the Berry curvature of the system. Our results demonstrate the possibility to artificially control the property of a two-dimensional magnet by modification of the substrate surface with a single monatomic layer.

AB - We developed an in situ Hall measurement setup and measured the anomalous Hall effect (AHE) in magnetic topological insulator heterostructures MnBi2Te4/Bi2Te3 grown on different Si(111) substrate surfaces. For the sample grown on the Si(111)- surface, the AHE signal appears at 15 K and becomes larger by further cooling, showing that the Curie temperature is 15 K. In contrast, although the is the same, the AHE signal shows a local maximum at 10 K for the sample grown on the -Bi/Si(111)- surface. A plausible explanation for this peculiar behavior is the enhanced skew scattering caused by the Bi layer, or the presence of the states localized at the interfacial Bi layer, which will affect the Berry curvature of the system. Our results demonstrate the possibility to artificially control the property of a two-dimensional magnet by modification of the substrate surface with a single monatomic layer.

UR - https://www.mendeley.com/catalogue/18e7bddc-7d51-3e9e-92b7-2e89280a40ec/

U2 - 10.1063/5.0266580

DO - 10.1063/5.0266580

M3 - Article

VL - 127

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 211601

ER -