TY - JOUR

T1 - Luminescent and electrical properties of oxygen-implanted silicon

AU - Danilov, Denis

AU - Vyvenko, Oleg

AU - Loshachenko, Anton

AU - Ber, Boris

AU - Kasantsev, Dmitrii

AU - Sobolev, Nikolay

PY - 2017/7/1

Y1 - 2017/7/1

N2 - Light emitting diodes with an active defect-rich region produced by oxygen implantation and a subsequent multistep annealing of silicon wafers were investigated by means of transmission electron microscopy, SIMS, capacitance voltage, deep level transient spectroscopy, electroluminescence (EL), and cathodoluminescence (CL) techniques. The properties of two groups of n-based samples with and without thermal pre-treatment at 1000 °C for 15 min were compared regarding their defect structure, defects electrical activity, luminescent spectra as well as the impact of prolonged intense electron irradiation. The observed difference in the properties of such groups was explained by a difference in the density and oxygen content of oxygen-related defects. A significant distinction between EL and CL spectra at low excitation levels was found and interpreted to be due to particular defect kinds in near-surface and the deepest layers of the implanted region. The blue shift of EL spectra upon excitation increase reported previously is explained by the increase of penetration depth of the holes and specific depth distribution of the defects of different kinds.

AB - Light emitting diodes with an active defect-rich region produced by oxygen implantation and a subsequent multistep annealing of silicon wafers were investigated by means of transmission electron microscopy, SIMS, capacitance voltage, deep level transient spectroscopy, electroluminescence (EL), and cathodoluminescence (CL) techniques. The properties of two groups of n-based samples with and without thermal pre-treatment at 1000 °C for 15 min were compared regarding their defect structure, defects electrical activity, luminescent spectra as well as the impact of prolonged intense electron irradiation. The observed difference in the properties of such groups was explained by a difference in the density and oxygen content of oxygen-related defects. A significant distinction between EL and CL spectra at low excitation levels was found and interpreted to be due to particular defect kinds in near-surface and the deepest layers of the implanted region. The blue shift of EL spectra upon excitation increase reported previously is explained by the increase of penetration depth of the holes and specific depth distribution of the defects of different kinds.

KW - luminescence

KW - oxygen ion implantation

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=85020393366&partnerID=8YFLogxK

U2 - 10.1002/pssc.201700114

DO - 10.1002/pssc.201700114

M3 - Article

AN - SCOPUS:85020393366

VL - 14

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 7

M1 - 1700114

ER -