Standard

Luminescence in ZnMnTe/ZnMgTe and CdMnTe/CdMgTe structures with different parameters of quantum wells. / Agekyan, V.F.; Serov, A.Y.; Filosofov, N.G.; Karczewski, G.

In: Semiconductors, Vol. 47, No. 1, 2013, p. 45-49.

Research output: Contribution to journal › Article

Harvard

Agekyan, VF, Serov, AY, Filosofov, NG & Karczewski, G 2013, 'Luminescence in ZnMnTe/ZnMgTe and CdMnTe/CdMgTe structures with different parameters of quantum wells', Semiconductors, vol. 47, no. 1, pp. 45-49. https://doi.org/10.1134/S1063782613010028

APA

Agekyan, V. F., Serov, A. Y., Filosofov, N. G., & Karczewski, G. (2013). Luminescence in ZnMnTe/ZnMgTe and CdMnTe/CdMgTe structures with different parameters of quantum wells. Semiconductors, 47(1), 45-49. https://doi.org/10.1134/S1063782613010028

Vancouver

Agekyan VF, Serov AY, Filosofov NG, Karczewski G. Luminescence in ZnMnTe/ZnMgTe and CdMnTe/CdMgTe structures with different parameters of quantum wells. Semiconductors. 2013;47(1):45-49. https://doi.org/10.1134/S1063782613010028

Author

Agekyan, V.F. ; Serov, A.Y. ; Filosofov, N.G. ; Karczewski, G. / Luminescence in ZnMnTe/ZnMgTe and CdMnTe/CdMgTe structures with different parameters of quantum wells. In: Semiconductors. 2013 ; Vol. 47, No. 1. pp. 45-49.

BibTeX

@article{240e6054a46d4a898b8a71e6836e6ba6,
title = "Luminescence in ZnMnTe/ZnMgTe and CdMnTe/CdMgTe structures with different parameters of quantum wells",
author = "V.F. Agekyan and A.Y. Serov and N.G. Filosofov and G. Karczewski",
year = "2013",
doi = "10.1134/S1063782613010028",
language = "English",
volume = "47",
pages = "45--49",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "1",

}

RIS

TY - JOUR

T1 - Luminescence in ZnMnTe/ZnMgTe and CdMnTe/CdMgTe structures with different parameters of quantum wells

AU - Agekyan, V.F.

AU - Serov, A.Y.

AU - Filosofov, N.G.

AU - Karczewski, G.

PY - 2013

Y1 - 2013

U2 - 10.1134/S1063782613010028

DO - 10.1134/S1063782613010028

M3 - Article

VL - 47

SP - 45

EP - 49

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 1

ER -

ID: 7381111