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Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates. / Кукушкин, Сергей Арсеньевич; Осипов, Андрей Викторович; Романычев, Андрей Иванович; Касаткин, Игорь Алексеевич; Лошаченко, Антон Сергеевич.

In: Technical Physics Letters, Vol. 46, No. 11, 2020, p. 1049-1052.

Research output: Contribution to journal › Article › peer-review

Harvard

Кукушкин, СА, Осипов, АВ, Романычев, АИ, Касаткин, ИА & Лошаченко, АС 2020, 'Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates', Technical Physics Letters, vol. 46, no. 11, pp. 1049-1052. https://doi.org/10.1134/S1063785020110085

APA

Кукушкин, С. А., Осипов, А. В., Романычев, А. И., Касаткин, И. А., & Лошаченко, А. С. (2020). Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates. Technical Physics Letters, 46(11), 1049-1052. https://doi.org/10.1134/S1063785020110085

Vancouver

Кукушкин СА, Осипов АВ, Романычев АИ, Касаткин ИА, Лошаченко АС. Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates. Technical Physics Letters. 2020;46(11):1049-1052. https://doi.org/10.1134/S1063785020110085

Author

Кукушкин, Сергей Арсеньевич ; Осипов, Андрей Викторович ; Романычев, Андрей Иванович ; Касаткин, Игорь Алексеевич ; Лошаченко, Антон Сергеевич. / Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates. In: Technical Physics Letters. 2020 ; Vol. 46, No. 11. pp. 1049-1052.

BibTeX

@article{cf262910991b4c2eb4e2ae235241d11e,
title = "Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates",
abstract = "A new method for epitaxial growth of cadmium sulfide (CdS) films in the metastable cubic phase by atomic-layer deposition on silicon substrates with a buffer layer of epitaxial silicon carbide has been developed. The growth of this CdS phase is provided by the low growth temperature (~180°C). The cubic phase was identified both by X-ray diffraction analysis and by spectral ellipsometry because the main peak of light absorption by CdS is split into two peaks, at 4.9 and 5.4 eV, in the hexagonal phase and is unsplit (degenerate) at 5.1 eV in the cubic phase.",
keywords = "cadmium sulfide, silicon carbide, heterostructures, atomic-layer deposition method, dielectric function, ellipsometry, cadmium sulfide, silicon carbide, heterostructures, atomic-layer deposition method, dielectric function, ellipsometry",
author = "Кукушкин, {Сергей Арсеньевич} and Осипов, {Андрей Викторович} and Романычев, {Андрей Иванович} and Касаткин, {Игорь Алексеевич} and Лошаченко, {Антон Сергеевич}",
year = "2020",
doi = "10.1134/S1063785020110085",
language = "English",
volume = "46",
pages = "1049--1052",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "11",

}

RIS

TY - JOUR

T1 - Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates

AU - Кукушкин, Сергей Арсеньевич

AU - Осипов, Андрей Викторович

AU - Романычев, Андрей Иванович

AU - Касаткин, Игорь Алексеевич

AU - Лошаченко, Антон Сергеевич

PY - 2020

Y1 - 2020

N2 - A new method for epitaxial growth of cadmium sulfide (CdS) films in the metastable cubic phase by atomic-layer deposition on silicon substrates with a buffer layer of epitaxial silicon carbide has been developed. The growth of this CdS phase is provided by the low growth temperature (~180°C). The cubic phase was identified both by X-ray diffraction analysis and by spectral ellipsometry because the main peak of light absorption by CdS is split into two peaks, at 4.9 and 5.4 eV, in the hexagonal phase and is unsplit (degenerate) at 5.1 eV in the cubic phase.

AB - A new method for epitaxial growth of cadmium sulfide (CdS) films in the metastable cubic phase by atomic-layer deposition on silicon substrates with a buffer layer of epitaxial silicon carbide has been developed. The growth of this CdS phase is provided by the low growth temperature (~180°C). The cubic phase was identified both by X-ray diffraction analysis and by spectral ellipsometry because the main peak of light absorption by CdS is split into two peaks, at 4.9 and 5.4 eV, in the hexagonal phase and is unsplit (degenerate) at 5.1 eV in the cubic phase.

KW - cadmium sulfide

KW - silicon carbide

KW - heterostructures

KW - atomic-layer deposition method

KW - dielectric function

KW - ellipsometry

KW - cadmium sulfide

KW - silicon carbide

KW - heterostructures

KW - atomic-layer deposition method

KW - dielectric function

KW - ellipsometry

U2 - 10.1134/S1063785020110085

DO - 10.1134/S1063785020110085

M3 - Article

VL - 46

SP - 1049

EP - 1052

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 11

ER -

ID: 70070913