Long term hole spin memory in the resonantly amplified spin coherence of InGaAs/GaAs quantum well electrons › SPbU Researchers Portal

Long term hole spin memory in the resonantly amplified spin coherence of InGaAs/GaAs quantum well electrons

Research output: Contribution to journal › Article

I.N.Uraltsev Research Laboratory of Spin Optics

DOI

https://doi.org/10.1103/PhysRevLett.102.167402
Other version

I. A. Yugova
A.A. Sokolova
D.R. Yakovlev
A. Greilich
D. Reuter
A.D. Wieck
M. Bayer

Original language	Undefined
Pages (from-to)	167402_1-4
Journal	Physical Review Letters
Volume	102
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevLett.102.167402
State	Published - 2009

ID: 5120287