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Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix. / Talalaev, V.; Tonkikh, A.; Zakharov, N.; Senichev, A.; Tomm, J.; Werner, P.; Novikov, B.; Asryan, L.; Fuhrmann, B.; Schilling, J.; Leipner, H.; Bouraulev, A.; Samsonenko, Y.; Khrebtov, A.; Soshnikov, I.; Cirlin, G.
In:
Semiconductors, Vol. 46, No. 11, 2012, p. 1460-1470.
Research output: Contribution to journal › Article
Harvard
Talalaev, V, Tonkikh, A, Zakharov, N, Senichev, A, Tomm, J, Werner, P
, Novikov, B, Asryan, L, Fuhrmann, B, Schilling, J, Leipner, H, Bouraulev, A, Samsonenko, Y, Khrebtov, A, Soshnikov, I & Cirlin, G 2012, '
Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix',
Semiconductors, vol. 46, no. 11, pp. 1460-1470.
https://doi.org/DOI: 10.1134/S1063782612110218,
https://doi.org/10.1134/S1063782612110218APA
Talalaev, V., Tonkikh, A., Zakharov, N., Senichev, A., Tomm, J., Werner, P.
, Novikov, B., Asryan, L., Fuhrmann, B., Schilling, J., Leipner, H., Bouraulev, A., Samsonenko, Y., Khrebtov, A., Soshnikov, I., & Cirlin, G. (2012).
Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix.
Semiconductors,
46(11), 1460-1470.
https://doi.org/DOI: 10.1134/S1063782612110218,
https://doi.org/10.1134/S1063782612110218Vancouver
Author
Talalaev, V. ; Tonkikh, A. ; Zakharov, N. ; Senichev, A. ; Tomm, J. ; Werner, P.
; Novikov, B. ; Asryan, L. ; Fuhrmann, B. ; Schilling, J. ; Leipner, H. ; Bouraulev, A. ; Samsonenko, Y. ; Khrebtov, A. ; Soshnikov, I. ; Cirlin, G. /
Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix. In:
Semiconductors. 2012 ; Vol. 46, No. 11. pp. 1460-1470.
BibTeX
@article{934f39d7bdb749279e996d1e706a92f6,
title = "Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix",
author = "V. Talalaev and A. Tonkikh and N. Zakharov and A. Senichev and J. Tomm and P. Werner and B. Novikov and L. Asryan and B. Fuhrmann and J. Schilling and H. Leipner and A. Bouraulev and Y. Samsonenko and A. Khrebtov and I. Soshnikov and G. Cirlin",
year = "2012",
doi = "DOI: 10.1134/S1063782612110218",
language = "English",
volume = "46",
pages = "1460--1470",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "11",
}
RIS
TY - JOUR
T1 - Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix
AU - Talalaev, V.
AU - Tonkikh, A.
AU - Zakharov, N.
AU - Senichev, A.
AU - Tomm, J.
AU - Werner, P.
AU - Novikov, B.
AU - Asryan, L.
AU - Fuhrmann, B.
AU - Schilling, J.
AU - Leipner, H.
AU - Bouraulev, A.
AU - Samsonenko, Y.
AU - Khrebtov, A.
AU - Soshnikov, I.
AU - Cirlin, G.
PY - 2012
Y1 - 2012
U2 - DOI: 10.1134/S1063782612110218
DO - DOI: 10.1134/S1063782612110218
M3 - Article
VL - 46
SP - 1460
EP - 1470
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 11
ER -
