The copper spots were precipitated on the SiO₂ substrates with Laser-induced Chemical Liquid phase Deposition (LCLD) method. The focused beam of the CW Ar⁺ laser generated in the multiwave regime was used for the metal precipitation. The deposition process was initiated by a laser-assisted photothermal chemical reaction, which results in the reduction of the metal complexes to the metal. To minimize the negative influence of the bubbles formation phenomenon the "substrate-side" geometry of the metal deposition has been suggested. The dependence of the metal precipitation process on the laser power and the deposition time was studied. Laser power 240 mW was found to be the threshold value for the metal deposition from the CUSO₄-based electrolyte solution at the temperature 298 K. A figure is presented. The microphoto of metal spots deposited at different laser powers (240-400 mW).