Standard

K‐Shell XAFS Formation in Silicon Crystal. / Pavlychev, A. A.; Barry, A.; Potapov, S. S.

In: physica status solidi (b), Vol. 168, No. 2, 01.01.1991, p. 635-641.

Research output: Contribution to journal › Article › peer-review

Harvard

Pavlychev, AA, Barry, A & Potapov, SS 1991, 'K‐Shell XAFS Formation in Silicon Crystal', physica status solidi (b), vol. 168, no. 2, pp. 635-641. https://doi.org/10.1002/pssb.2221680226

APA

Pavlychev, A. A., Barry, A., & Potapov, S. S. (1991). K‐Shell XAFS Formation in Silicon Crystal. physica status solidi (b), 168(2), 635-641. https://doi.org/10.1002/pssb.2221680226

Vancouver

Pavlychev AA, Barry A, Potapov SS. K‐Shell XAFS Formation in Silicon Crystal. physica status solidi (b). 1991 Jan 1;168(2):635-641. https://doi.org/10.1002/pssb.2221680226

Author

Pavlychev, A. A. ; Barry, A. ; Potapov, S. S. / K‐Shell XAFS Formation in Silicon Crystal. In: physica status solidi (b). 1991 ; Vol. 168, No. 2. pp. 635-641.

BibTeX

@article{6c7ce08874254a9ca3dade29f8c24b7f,
title = "K‐Shell XAFS Formation in Silicon Crystal",
abstract = "X‐ray absorption fine structure (XAFS) formation in a silicon crystal is analysed on the basis of a quasiatomic description. The spectral dependence of the XAFS formation mechanism is investigated. The existence is shown of four specific spectral regions with different electron‐optical characteristics of the atomic surroundings and different “size” effect of XAFS formation. It is shown that (i) the sensitivity of XAFS to distant coordination shells is maximum in the interval 30 nm−1 < k < 60 nm−1 and (ii) the combination of single reflections from the surroundings and photoelectron refraction in the surroundings well describes the XAFS in a very large domain k > 25 nm−1.",
author = "Pavlychev, {A. A.} and A. Barry and Potapov, {S. S.}",
year = "1991",
month = jan,
day = "1",
doi = "10.1002/pssb.2221680226",
language = "English",
volume = "168",
pages = "635--641",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-Blackwell",
number = "2",

}

RIS

TY - JOUR

T1 - K‐Shell XAFS Formation in Silicon Crystal

AU - Pavlychev, A. A.

AU - Barry, A.

AU - Potapov, S. S.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - X‐ray absorption fine structure (XAFS) formation in a silicon crystal is analysed on the basis of a quasiatomic description. The spectral dependence of the XAFS formation mechanism is investigated. The existence is shown of four specific spectral regions with different electron‐optical characteristics of the atomic surroundings and different “size” effect of XAFS formation. It is shown that (i) the sensitivity of XAFS to distant coordination shells is maximum in the interval 30 nm−1 < k < 60 nm−1 and (ii) the combination of single reflections from the surroundings and photoelectron refraction in the surroundings well describes the XAFS in a very large domain k > 25 nm−1.

AB - X‐ray absorption fine structure (XAFS) formation in a silicon crystal is analysed on the basis of a quasiatomic description. The spectral dependence of the XAFS formation mechanism is investigated. The existence is shown of four specific spectral regions with different electron‐optical characteristics of the atomic surroundings and different “size” effect of XAFS formation. It is shown that (i) the sensitivity of XAFS to distant coordination shells is maximum in the interval 30 nm−1 < k < 60 nm−1 and (ii) the combination of single reflections from the surroundings and photoelectron refraction in the surroundings well describes the XAFS in a very large domain k > 25 nm−1.

UR - http://www.scopus.com/inward/record.url?scp=84914068925&partnerID=8YFLogxK

U2 - 10.1002/pssb.2221680226

DO - 10.1002/pssb.2221680226

M3 - Article

AN - SCOPUS:84914068925

VL - 168

SP - 635

EP - 641

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 2

ER -

ID: 43211107