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Kinetic approach to field emission from semiconductors by computer simulation using particles. / Gherm, V. E.; Mileshkina, N. V.; Semykina, E. A.

In: Journal of Physics: Condensed Matter, Vol. 2, No. 5, 017, 1990, p. 1263-1270.

Research output: Contribution to journal › Article › peer-review

Harvard

Gherm, VE, Mileshkina, NV & Semykina, EA 1990, 'Kinetic approach to field emission from semiconductors by computer simulation using particles', Journal of Physics: Condensed Matter, vol. 2, no. 5, 017, pp. 1263-1270. https://doi.org/10.1088/0953-8984/2/5/017

APA

Gherm, V. E., Mileshkina, N. V., & Semykina, E. A. (1990). Kinetic approach to field emission from semiconductors by computer simulation using particles. Journal of Physics: Condensed Matter, 2(5), 1263-1270. [017]. https://doi.org/10.1088/0953-8984/2/5/017

Vancouver

Gherm VE, Mileshkina NV, Semykina EA. Kinetic approach to field emission from semiconductors by computer simulation using particles. Journal of Physics: Condensed Matter. 1990;2(5):1263-1270. 017. https://doi.org/10.1088/0953-8984/2/5/017

Author

Gherm, V. E. ; Mileshkina, N. V. ; Semykina, E. A. / Kinetic approach to field emission from semiconductors by computer simulation using particles. In: Journal of Physics: Condensed Matter. 1990 ; Vol. 2, No. 5. pp. 1263-1270.

BibTeX

@article{d1e8e01fb73b4a35b282cca9a50c2781,
title = "Kinetic approach to field emission from semiconductors by computer simulation using particles",
abstract = "Direct statistical simulation of non-stationary non-equilibrium electronic phenomena in one-dimensional semiconductor structures is carried out to estimate their influence on the field emission from semiconductors in different working modes of needle cathodes. A macroparticles method is used with self-consistent electric field conditions, taking into account the three-dimensional character of the electron scattering. Computation results are given for n-type A IIIBV semiconductors.",
author = "Gherm, {V. E.} and Mileshkina, {N. V.} and Semykina, {E. A.}",
year = "1990",
doi = "10.1088/0953-8984/2/5/017",
language = "English",
volume = "2",
pages = "1263--1270",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "5",

}

RIS

TY - JOUR

T1 - Kinetic approach to field emission from semiconductors by computer simulation using particles

AU - Gherm, V. E.

AU - Mileshkina, N. V.

AU - Semykina, E. A.

PY - 1990

Y1 - 1990

N2 - Direct statistical simulation of non-stationary non-equilibrium electronic phenomena in one-dimensional semiconductor structures is carried out to estimate their influence on the field emission from semiconductors in different working modes of needle cathodes. A macroparticles method is used with self-consistent electric field conditions, taking into account the three-dimensional character of the electron scattering. Computation results are given for n-type A IIIBV semiconductors.

AB - Direct statistical simulation of non-stationary non-equilibrium electronic phenomena in one-dimensional semiconductor structures is carried out to estimate their influence on the field emission from semiconductors in different working modes of needle cathodes. A macroparticles method is used with self-consistent electric field conditions, taking into account the three-dimensional character of the electron scattering. Computation results are given for n-type A IIIBV semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=36149029208&partnerID=8YFLogxK

U2 - 10.1088/0953-8984/2/5/017

DO - 10.1088/0953-8984/2/5/017

M3 - Article

AN - SCOPUS:36149029208

VL - 2

SP - 1263

EP - 1270

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 5

M1 - 017

ER -

ID: 18140986