Standard

Investigation into the mechanism of oxidation on the surface of lead selenide semiconductor structures. / Popov, V.P.; Tikhonov, P.A.; Tomaev, V.V.

In: Glass Physics and Chemistry, Vol. 29, No. 5, 2003, p. 494-500.

Research output: Contribution to journal › Article

Harvard

Popov, VP, Tikhonov, PA & Tomaev, VV 2003, 'Investigation into the mechanism of oxidation on the surface of lead selenide semiconductor structures', Glass Physics and Chemistry, vol. 29, no. 5, pp. 494-500.

APA

Popov, V. P., Tikhonov, P. A., & Tomaev, V. V. (2003). Investigation into the mechanism of oxidation on the surface of lead selenide semiconductor structures. Glass Physics and Chemistry, 29(5), 494-500.

Vancouver

Popov VP, Tikhonov PA, Tomaev VV. Investigation into the mechanism of oxidation on the surface of lead selenide semiconductor structures. Glass Physics and Chemistry. 2003;29(5):494-500.

Author

Popov, V.P. ; Tikhonov, P.A. ; Tomaev, V.V. / Investigation into the mechanism of oxidation on the surface of lead selenide semiconductor structures. In: Glass Physics and Chemistry. 2003 ; Vol. 29, No. 5. pp. 494-500.

BibTeX

@article{27ec1ab6fbe54ec7ab12798b88b27fc1,
title = "Investigation into the mechanism of oxidation on the surface of lead selenide semiconductor structures",
author = "V.P. Popov and P.A. Tikhonov and V.V. Tomaev",
year = "2003",
language = "English",
volume = "29",
pages = "494--500",
journal = "Glass Physics and Chemistry",
issn = "1087-6596",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "5",

}

RIS

TY - JOUR

T1 - Investigation into the mechanism of oxidation on the surface of lead selenide semiconductor structures

AU - Popov, V.P.

AU - Tikhonov, P.A.

AU - Tomaev, V.V.

PY - 2003

Y1 - 2003

M3 - Article

VL - 29

SP - 494

EP - 500

JO - Glass Physics and Chemistry

JF - Glass Physics and Chemistry

SN - 1087-6596

IS - 5

ER -

ID: 5127077