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Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN. / Medvedev, O.; Vyvenko, O.; Ubyivovk, E.; Shapenkov, S.; Bondarenko, A.; Saring, P.; Seibt, M.

In: Journal of Applied Physics, Vol. 123, No. 16, 161427, 28.04.2018.

Research output: Contribution to journal › Article › peer-review

Harvard

Medvedev, O, Vyvenko, O, Ubyivovk, E, Shapenkov, S, Bondarenko, A, Saring, P & Seibt, M 2018, 'Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN', Journal of Applied Physics, vol. 123, no. 16, 161427. https://doi.org/10.1063/1.5011368

APA

Medvedev, O., Vyvenko, O., Ubyivovk, E., Shapenkov, S., Bondarenko, A., Saring, P., & Seibt, M. (2018). Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN. Journal of Applied Physics, 123(16), [161427]. https://doi.org/10.1063/1.5011368

Vancouver

Medvedev O, Vyvenko O, Ubyivovk E, Shapenkov S, Bondarenko A, Saring P et al. Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN. Journal of Applied Physics. 2018 Apr 28;123(16). 161427. https://doi.org/10.1063/1.5011368

Author

Medvedev, O. ; Vyvenko, O. ; Ubyivovk, E. ; Shapenkov, S. ; Bondarenko, A. ; Saring, P. ; Seibt, M. / Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN. In: Journal of Applied Physics. 2018 ; Vol. 123, No. 16.

BibTeX

@article{92808fcc9c5446f5beba3f4c22a6fa79,
title = "Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN",
abstract = "Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A strong luminescence of straight segments of a-screw dislocations was observed in the temperature range of 70-420K. The spectrum of dislocation related luminescence (DRL) consisted of a doublet of narrow lines red shifted by about 0.3 eV with respect to the band gap. TEM revealed dissociated character of the screw dislocations and the formation of extended nodes at their intersection. From the analysis of the DRL spectral doublet temperature, power and strain dependences DRL was ascribed to direct and indirect excitons bound by 1D quantum wells formed by partials and stacking fault (SF) ribbon of dissociated screw dislocation. Published by AIP Publishing.",
keywords = "TRANSMISSION ELECTRON-MICROSCOPE, STACKING-FAULTS, GALLIUM NITRIDE, CATHODOLUMINESCENCE, PHOTOLUMINESCENCE, RECOMBINATION, DEFORMATION, EXCITONS, ENERGY",
author = "O. Medvedev and O. Vyvenko and E. Ubyivovk and S. Shapenkov and A. Bondarenko and P. Saring and M. Seibt",
year = "2018",
month = apr,
day = "28",
doi = "10.1063/1.5011368",
language = "Английский",
volume = "123",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "16",
note = "null ; Conference date: 30-07-2017 Through 03-08-2017",
url = "http://www.icds2017.org/",

}

RIS

TY - JOUR

T1 - Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN

AU - Medvedev, O.

AU - Vyvenko, O.

AU - Ubyivovk, E.

AU - Shapenkov, S.

AU - Bondarenko, A.

AU - Saring, P.

AU - Seibt, M.

N1 - Conference code: 29

PY - 2018/4/28

Y1 - 2018/4/28

N2 - Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A strong luminescence of straight segments of a-screw dislocations was observed in the temperature range of 70-420K. The spectrum of dislocation related luminescence (DRL) consisted of a doublet of narrow lines red shifted by about 0.3 eV with respect to the band gap. TEM revealed dissociated character of the screw dislocations and the formation of extended nodes at their intersection. From the analysis of the DRL spectral doublet temperature, power and strain dependences DRL was ascribed to direct and indirect excitons bound by 1D quantum wells formed by partials and stacking fault (SF) ribbon of dissociated screw dislocation. Published by AIP Publishing.

AB - Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A strong luminescence of straight segments of a-screw dislocations was observed in the temperature range of 70-420K. The spectrum of dislocation related luminescence (DRL) consisted of a doublet of narrow lines red shifted by about 0.3 eV with respect to the band gap. TEM revealed dissociated character of the screw dislocations and the formation of extended nodes at their intersection. From the analysis of the DRL spectral doublet temperature, power and strain dependences DRL was ascribed to direct and indirect excitons bound by 1D quantum wells formed by partials and stacking fault (SF) ribbon of dissociated screw dislocation. Published by AIP Publishing.

KW - TRANSMISSION ELECTRON-MICROSCOPE

KW - STACKING-FAULTS

KW - GALLIUM NITRIDE

KW - CATHODOLUMINESCENCE

KW - PHOTOLUMINESCENCE

KW - RECOMBINATION

KW - DEFORMATION

KW - EXCITONS

KW - ENERGY

UR - http://www.mendeley.com/research/intrinsic-luminescence-core-structure-freshly-introduced-ascrew-dislocations-ngan

UR - http://www.scopus.com/inward/record.url?scp=85046107970&partnerID=8YFLogxK

U2 - 10.1063/1.5011368

DO - 10.1063/1.5011368

M3 - статья

VL - 123

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 16

M1 - 161427

Y2 - 30 July 2017 through 3 August 2017

ER -

ID: 28361319