Standard

Intrinsic Anomalous Hall Effect on the Surface of a Magnetic Semiconductor with the Strong Rashba Effect. / Men’shov, V. N.; Rusinov, I. P.; Chulkov, E. V.

In: JETP Letters, Vol. 121, No. 5, 01.03.2025, p. 372-380.

Research output: Contribution to journalArticlepeer-review

Harvard

APA

Vancouver

Author

BibTeX

@article{558a54778f4743a29e1418b11178052f,
title = "Intrinsic Anomalous Hall Effect on the Surface of a Magnetic Semiconductor with the Strong Rashba Effect",
author = "Men{\textquoteright}shov, {V. N.} and Rusinov, {I. P.} and Chulkov, {E. V.}",
year = "2025",
month = mar,
day = "1",
doi = "10.1134/S0021364024605268",
language = "English",
volume = "121",
pages = "372--380",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "5",

}

RIS

TY - JOUR

T1 - Intrinsic Anomalous Hall Effect on the Surface of a Magnetic Semiconductor with the Strong Rashba Effect

AU - Men’shov, V. N.

AU - Rusinov, I. P.

AU - Chulkov, E. V.

PY - 2025/3/1

Y1 - 2025/3/1

U2 - 10.1134/S0021364024605268

DO - 10.1134/S0021364024605268

M3 - Article

VL - 121

SP - 372

EP - 380

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 5

ER -

ID: 152195539