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Interplay between exchange-split Dirac and Rashba-type surface states at the MnBi2Te4/BiTeI interface. / Zaitsev, N. L. ; Русинов, Игорь Павлович; Menshchikova, T. V. ; Чулков, Евгений Владимирович.

In: Physical Review B, Vol. 107, No. 4, 045402, 03.01.2023.

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Zaitsev, N. L. ; Русинов, Игорь Павлович ; Menshchikova, T. V. ; Чулков, Евгений Владимирович. / Interplay between exchange-split Dirac and Rashba-type surface states at the MnBi2Te4/BiTeI interface. In: Physical Review B. 2023 ; Vol. 107, No. 4.

BibTeX

@article{39b42c4ca94847729f41376d7d03086f,
title = "Interplay between exchange-split Dirac and Rashba-type surface states at the MnBi2Te4/BiTeI interface",
abstract = "Based on ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the antiferromagnetic topological insulator MnBi2Te4 and the polar semiconductor trilayer BiTeI. We found a significant difference in the electronic properties of the different contacts between the substrate and overlayer. While the case of a Te-Te interface forms a natural expansion of the substrate, when the Dirac cone state locates mostly in the polar overlayer region and undergoes a slight exchange splitting, the Te-I contact is the source of a four-band state contributed by the substrate Dirac cone and Rashba-type state of the polar trilayer. Owing to magnetic proximity, the pair of Kramers degeneracies for this state is lifted, which produces a Hall response in the transport regime. We believe our findings provide new opportunities to construct novel spintronic devices.",
author = "Zaitsev, {N. L.} and Русинов, {Игорь Павлович} and Menshchikova, {T. V.} and Чулков, {Евгений Владимирович}",
year = "2023",
month = jan,
day = "3",
doi = "10.1103/PhysRevB.107.045402",
language = "English",
volume = "107",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "4",

}

RIS

TY - JOUR

T1 - Interplay between exchange-split Dirac and Rashba-type surface states at the MnBi2Te4/BiTeI interface

AU - Zaitsev, N. L.

AU - Русинов, Игорь Павлович

AU - Menshchikova, T. V.

AU - Чулков, Евгений Владимирович

PY - 2023/1/3

Y1 - 2023/1/3

N2 - Based on ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the antiferromagnetic topological insulator MnBi2Te4 and the polar semiconductor trilayer BiTeI. We found a significant difference in the electronic properties of the different contacts between the substrate and overlayer. While the case of a Te-Te interface forms a natural expansion of the substrate, when the Dirac cone state locates mostly in the polar overlayer region and undergoes a slight exchange splitting, the Te-I contact is the source of a four-band state contributed by the substrate Dirac cone and Rashba-type state of the polar trilayer. Owing to magnetic proximity, the pair of Kramers degeneracies for this state is lifted, which produces a Hall response in the transport regime. We believe our findings provide new opportunities to construct novel spintronic devices.

AB - Based on ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the antiferromagnetic topological insulator MnBi2Te4 and the polar semiconductor trilayer BiTeI. We found a significant difference in the electronic properties of the different contacts between the substrate and overlayer. While the case of a Te-Te interface forms a natural expansion of the substrate, when the Dirac cone state locates mostly in the polar overlayer region and undergoes a slight exchange splitting, the Te-I contact is the source of a four-band state contributed by the substrate Dirac cone and Rashba-type state of the polar trilayer. Owing to magnetic proximity, the pair of Kramers degeneracies for this state is lifted, which produces a Hall response in the transport regime. We believe our findings provide new opportunities to construct novel spintronic devices.

UR - https://www.mendeley.com/catalogue/188645df-7884-393a-a683-7c6605fab789/

U2 - 10.1103/PhysRevB.107.045402

DO - 10.1103/PhysRevB.107.045402

M3 - Article

VL - 107

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 4

M1 - 045402

ER -

ID: 103174763