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Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures. / Men'shov, V. N.; Shvets, I. A.; Tugushev, V. V.; Chulkov, E. V.

In: Journal of Magnetism and Magnetic Materials, Vol. 459, 01.08.2018, p. 231-235.

Research output: Contribution to journal › Article › peer-review

Harvard

Men'shov, VN, Shvets, IA, Tugushev, VV & Chulkov, EV 2018, 'Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures', Journal of Magnetism and Magnetic Materials, vol. 459, pp. 231-235. https://doi.org/10.1016/j.jmmm.2017.10.106

APA

Men'shov, V. N., Shvets, I. A., Tugushev, V. V., & Chulkov, E. V. (2018). Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures. Journal of Magnetism and Magnetic Materials, 459, 231-235. https://doi.org/10.1016/j.jmmm.2017.10.106

Vancouver

Men'shov VN, Shvets IA, Tugushev VV, Chulkov EV. Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures. Journal of Magnetism and Magnetic Materials. 2018 Aug 1;459:231-235. https://doi.org/10.1016/j.jmmm.2017.10.106

Author

Men'shov, V. N. ; Shvets, I. A. ; Tugushev, V. V. ; Chulkov, E. V. / Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures. In: Journal of Magnetism and Magnetic Materials. 2018 ; Vol. 459. pp. 231-235.

BibTeX

@article{3bef117b2c5c4efca14097a35161ac66,
title = "Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures",
abstract = "We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the natural boundary conditions within a continual scheme, we show that the intrinsic spin Hall response of the NI/TI/NI trilayer can be controlled by tuning the interface potential (IP) together with the TI film thickness. We predict a series of interface induced quantum transitions between topological insulating phase and trivial band insulator phase. We calculate the phase diagram of the NI/TI/NI trilayer and establish an appropriate range of the IP strength and the TI film thickness to realize the regime of quantum spin Hall effect. Our results can provide a useful guide in choosing the relevant material parameters to facilitate the detection of quantum spin Hall conductivity in the TI/NI heterostructures.",
keywords = "Interface states, Quantum spin Hall effect, Topological insulator, STATES, BOUNDARY",
author = "Men'shov, {V. N.} and Shvets, {I. A.} and Tugushev, {V. V.} and Chulkov, {E. V.}",
year = "2018",
month = aug,
day = "1",
doi = "10.1016/j.jmmm.2017.10.106",
language = "English",
volume = "459",
pages = "231--235",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures

AU - Men'shov, V. N.

AU - Shvets, I. A.

AU - Tugushev, V. V.

AU - Chulkov, E. V.

PY - 2018/8/1

Y1 - 2018/8/1

N2 - We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the natural boundary conditions within a continual scheme, we show that the intrinsic spin Hall response of the NI/TI/NI trilayer can be controlled by tuning the interface potential (IP) together with the TI film thickness. We predict a series of interface induced quantum transitions between topological insulating phase and trivial band insulator phase. We calculate the phase diagram of the NI/TI/NI trilayer and establish an appropriate range of the IP strength and the TI film thickness to realize the regime of quantum spin Hall effect. Our results can provide a useful guide in choosing the relevant material parameters to facilitate the detection of quantum spin Hall conductivity in the TI/NI heterostructures.

AB - We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the natural boundary conditions within a continual scheme, we show that the intrinsic spin Hall response of the NI/TI/NI trilayer can be controlled by tuning the interface potential (IP) together with the TI film thickness. We predict a series of interface induced quantum transitions between topological insulating phase and trivial band insulator phase. We calculate the phase diagram of the NI/TI/NI trilayer and establish an appropriate range of the IP strength and the TI film thickness to realize the regime of quantum spin Hall effect. Our results can provide a useful guide in choosing the relevant material parameters to facilitate the detection of quantum spin Hall conductivity in the TI/NI heterostructures.

KW - Interface states

KW - Quantum spin Hall effect

KW - Topological insulator

KW - STATES

KW - BOUNDARY

UR - http://www.scopus.com/inward/record.url?scp=85033683941&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2017.10.106

DO - 10.1016/j.jmmm.2017.10.106

M3 - Article

AN - SCOPUS:85033683941

VL - 459

SP - 231

EP - 235

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

ER -

ID: 36280569