Research output: Contribution to journal › Article › peer-review
Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures. / Men'shov, V. N.; Shvets, I. A.; Tugushev, V. V.; Chulkov, E. V.
In: Journal of Magnetism and Magnetic Materials, Vol. 459, 01.08.2018, p. 231-235.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures
AU - Men'shov, V. N.
AU - Shvets, I. A.
AU - Tugushev, V. V.
AU - Chulkov, E. V.
PY - 2018/8/1
Y1 - 2018/8/1
N2 - We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the natural boundary conditions within a continual scheme, we show that the intrinsic spin Hall response of the NI/TI/NI trilayer can be controlled by tuning the interface potential (IP) together with the TI film thickness. We predict a series of interface induced quantum transitions between topological insulating phase and trivial band insulator phase. We calculate the phase diagram of the NI/TI/NI trilayer and establish an appropriate range of the IP strength and the TI film thickness to realize the regime of quantum spin Hall effect. Our results can provide a useful guide in choosing the relevant material parameters to facilitate the detection of quantum spin Hall conductivity in the TI/NI heterostructures.
AB - We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the natural boundary conditions within a continual scheme, we show that the intrinsic spin Hall response of the NI/TI/NI trilayer can be controlled by tuning the interface potential (IP) together with the TI film thickness. We predict a series of interface induced quantum transitions between topological insulating phase and trivial band insulator phase. We calculate the phase diagram of the NI/TI/NI trilayer and establish an appropriate range of the IP strength and the TI film thickness to realize the regime of quantum spin Hall effect. Our results can provide a useful guide in choosing the relevant material parameters to facilitate the detection of quantum spin Hall conductivity in the TI/NI heterostructures.
KW - Interface states
KW - Quantum spin Hall effect
KW - Topological insulator
KW - STATES
KW - BOUNDARY
UR - http://www.scopus.com/inward/record.url?scp=85033683941&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2017.10.106
DO - 10.1016/j.jmmm.2017.10.106
M3 - Article
AN - SCOPUS:85033683941
VL - 459
SP - 231
EP - 235
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
ER -
ID: 36280569