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Interface Formation between Organic and Inorganic Semiconductor : Cu-Phthalocyanine on CdS(0001) Surface. / Komolov, S. A.; Lazneva, E. F.; Komolov, A. S.

In: Physics of Low-Dimensional Structures, Vol. 1-2, 01.01.2003, p. 97-104.

Research output: Contribution to journal › Article › peer-review

Harvard

Komolov, SA, Lazneva, EF & Komolov, AS 2003, 'Interface Formation between Organic and Inorganic Semiconductor: Cu-Phthalocyanine on CdS(0001) Surface', Physics of Low-Dimensional Structures, vol. 1-2, pp. 97-104.

APA

Komolov, S. A., Lazneva, E. F., & Komolov, A. S. (2003). Interface Formation between Organic and Inorganic Semiconductor: Cu-Phthalocyanine on CdS(0001) Surface. Physics of Low-Dimensional Structures, 1-2, 97-104.

Vancouver

Komolov SA, Lazneva EF, Komolov AS. Interface Formation between Organic and Inorganic Semiconductor: Cu-Phthalocyanine on CdS(0001) Surface. Physics of Low-Dimensional Structures. 2003 Jan 1;1-2:97-104.

Author

Komolov, S. A. ; Lazneva, E. F. ; Komolov, A. S. / Interface Formation between Organic and Inorganic Semiconductor : Cu-Phthalocyanine on CdS(0001) Surface. In: Physics of Low-Dimensional Structures. 2003 ; Vol. 1-2. pp. 97-104.

BibTeX

@article{c5152548fd804dad8f3ca72b766fdbdc,
title = "Interface Formation between Organic and Inorganic Semiconductor: Cu-Phthalocyanine on CdS(0001) Surface",
abstract = "Initial stage of Cu-phthalocyanine (CuPc) organic molecules deposition in UHV on atomically clean CdS(0001) substrate was studied by using Total Current Spectroscopy (TCS), Auger Electron Spectroscopy (AES) and the work function (WF) measurements. Evolution of the WF, the density of unoccupied states (DOUS) located 0-25 eV above the vacuum level and the chemical composition were measured during the film deposition (in situ) in the range of deposit thickness of 0-10 nm. Formation of the {"}interface layer{"} of the variable composition 2-3 monolayers thick was observed. The role of the chemical interactions between organic and inorganic semiconductors and the diffusion of metalloid (S) component were discussed.",
author = "Komolov, {S. A.} and Lazneva, {E. F.} and Komolov, {A. S.}",
year = "2003",
month = jan,
day = "1",
language = "English",
volume = "1-2",
pages = "97--104",
journal = "Physics of Low-Dimensional Structures",
issn = "0204-3467",
publisher = "Институт физики твердого тела РАН",

}

RIS

TY - JOUR

T1 - Interface Formation between Organic and Inorganic Semiconductor

T2 - Cu-Phthalocyanine on CdS(0001) Surface

AU - Komolov, S. A.

AU - Lazneva, E. F.

AU - Komolov, A. S.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - Initial stage of Cu-phthalocyanine (CuPc) organic molecules deposition in UHV on atomically clean CdS(0001) substrate was studied by using Total Current Spectroscopy (TCS), Auger Electron Spectroscopy (AES) and the work function (WF) measurements. Evolution of the WF, the density of unoccupied states (DOUS) located 0-25 eV above the vacuum level and the chemical composition were measured during the film deposition (in situ) in the range of deposit thickness of 0-10 nm. Formation of the "interface layer" of the variable composition 2-3 monolayers thick was observed. The role of the chemical interactions between organic and inorganic semiconductors and the diffusion of metalloid (S) component were discussed.

AB - Initial stage of Cu-phthalocyanine (CuPc) organic molecules deposition in UHV on atomically clean CdS(0001) substrate was studied by using Total Current Spectroscopy (TCS), Auger Electron Spectroscopy (AES) and the work function (WF) measurements. Evolution of the WF, the density of unoccupied states (DOUS) located 0-25 eV above the vacuum level and the chemical composition were measured during the film deposition (in situ) in the range of deposit thickness of 0-10 nm. Formation of the "interface layer" of the variable composition 2-3 monolayers thick was observed. The role of the chemical interactions between organic and inorganic semiconductors and the diffusion of metalloid (S) component were discussed.

UR - http://www.scopus.com/inward/record.url?scp=0346899224&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0346899224

VL - 1-2

SP - 97

EP - 104

JO - Physics of Low-Dimensional Structures

JF - Physics of Low-Dimensional Structures

SN - 0204-3467

ER -

ID: 39289441