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Interface analysis of HfO2 films on (100)Si using X-ray photoelectron spectroscopy. / Sokolov, A. A.; Filatova, E. O.; Afanas'Ev, V. V.; Taracheva, E. Yu; Brzhezinskaya, M. M.; Ovchinnikov, A. A.

In: Journal of Physics D - Applied Physics, Vol. 42, No. 3, 09.04.2009, p. 035308_1-6.

Research output: Contribution to journal › Article › peer-review

Harvard

Sokolov, AA, Filatova, EO, Afanas'Ev, VV, Taracheva, EY, Brzhezinskaya, MM & Ovchinnikov, AA 2009, 'Interface analysis of HfO2 films on (100)Si using X-ray photoelectron spectroscopy', Journal of Physics D - Applied Physics, vol. 42, no. 3, pp. 035308_1-6. https://doi.org/10.1088/0022-3727/42/3/035308, https://doi.org/DOI: 10.1088/0022-3727/42/3/035308

APA

Sokolov, A. A., Filatova, E. O., Afanas'Ev, V. V., Taracheva, E. Y., Brzhezinskaya, M. M., & Ovchinnikov, A. A. (2009). Interface analysis of HfO2 films on (100)Si using X-ray photoelectron spectroscopy. Journal of Physics D - Applied Physics, 42(3), 035308_1-6. https://doi.org/10.1088/0022-3727/42/3/035308, https://doi.org/DOI: 10.1088/0022-3727/42/3/035308

Vancouver

Sokolov AA, Filatova EO, Afanas'Ev VV, Taracheva EY, Brzhezinskaya MM, Ovchinnikov AA. Interface analysis of HfO2 films on (100)Si using X-ray photoelectron spectroscopy. Journal of Physics D - Applied Physics. 2009 Apr 9;42(3):035308_1-6. https://doi.org/10.1088/0022-3727/42/3/035308, https://doi.org/DOI: 10.1088/0022-3727/42/3/035308

Author

Sokolov, A. A. ; Filatova, E. O. ; Afanas'Ev, V. V. ; Taracheva, E. Yu ; Brzhezinskaya, M. M. ; Ovchinnikov, A. A. / Interface analysis of HfO2 films on (100)Si using X-ray photoelectron spectroscopy. In: Journal of Physics D - Applied Physics. 2009 ; Vol. 42, No. 3. pp. 035308_1-6.

BibTeX

@article{7496499bec3c441397a9c20d31f587b9,
title = "Interface analysis of HfO2 films on (100)Si using X-ray photoelectron spectroscopy",
abstract = "Thin layers of HfO2 grown on the (1 0 0)Si crystal surface using atomic layer deposition or metallo-organic chemical vapour deposition were analysed using x-ray photoelectron spectroscopy (XPS) of Hf 4f, Si 2p and O 1s electron states. The chemical indepth profiling was conducted by combining XPS with Ar+ ion sputtering. In addition to establishing the deposition-sensitive oxide structure, Ar+ ion sputtering was found to lead to the formation of a metallic Hf layer on the surface of the sample. The latter observation suggests HfO2 as a feasible candidate for not only insulating applications but, thanks to the high mass and electron density of the cation, also as a material suitable for the fabrication of nanometre-sized conductors by direct oxide decomposition. {\textcopyright} 2009 IOP Publishing Ltd.",
author = "Sokolov, {A. A.} and Filatova, {E. O.} and Afanas'Ev, {V. V.} and Taracheva, {E. Yu} and Brzhezinskaya, {M. M.} and Ovchinnikov, {A. A.}",
year = "2009",
month = apr,
day = "9",
doi = "10.1088/0022-3727/42/3/035308",
language = "English",
volume = "42",
pages = "035308_1--6",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "3",

}

RIS

TY - JOUR

T1 - Interface analysis of HfO2 films on (100)Si using X-ray photoelectron spectroscopy

AU - Sokolov, A. A.

AU - Filatova, E. O.

AU - Afanas'Ev, V. V.

AU - Taracheva, E. Yu

AU - Brzhezinskaya, M. M.

AU - Ovchinnikov, A. A.

PY - 2009/4/9

Y1 - 2009/4/9

N2 - Thin layers of HfO2 grown on the (1 0 0)Si crystal surface using atomic layer deposition or metallo-organic chemical vapour deposition were analysed using x-ray photoelectron spectroscopy (XPS) of Hf 4f, Si 2p and O 1s electron states. The chemical indepth profiling was conducted by combining XPS with Ar+ ion sputtering. In addition to establishing the deposition-sensitive oxide structure, Ar+ ion sputtering was found to lead to the formation of a metallic Hf layer on the surface of the sample. The latter observation suggests HfO2 as a feasible candidate for not only insulating applications but, thanks to the high mass and electron density of the cation, also as a material suitable for the fabrication of nanometre-sized conductors by direct oxide decomposition. © 2009 IOP Publishing Ltd.

AB - Thin layers of HfO2 grown on the (1 0 0)Si crystal surface using atomic layer deposition or metallo-organic chemical vapour deposition were analysed using x-ray photoelectron spectroscopy (XPS) of Hf 4f, Si 2p and O 1s electron states. The chemical indepth profiling was conducted by combining XPS with Ar+ ion sputtering. In addition to establishing the deposition-sensitive oxide structure, Ar+ ion sputtering was found to lead to the formation of a metallic Hf layer on the surface of the sample. The latter observation suggests HfO2 as a feasible candidate for not only insulating applications but, thanks to the high mass and electron density of the cation, also as a material suitable for the fabrication of nanometre-sized conductors by direct oxide decomposition. © 2009 IOP Publishing Ltd.

UR - http://www.scopus.com/inward/record.url?scp=63749112204&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/42/3/035308

DO - 10.1088/0022-3727/42/3/035308

M3 - Article

VL - 42

SP - 035308_1-6

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 3

ER -

ID: 5192014