Standard

Inorganic rings and clusters as single-source precursors toward stoichiometry controlled synthesis of materials : Gas phase chemistry in command. / Timoshkin, A. Y.

In: Phosphorus, Sulfur and Silicon and the Related Elements, Vol. 179, No. 4-5, 04.2004, p. 707-710.

Research output: Contribution to journal › Article › peer-review

Harvard

Timoshkin, AY 2004, 'Inorganic rings and clusters as single-source precursors toward stoichiometry controlled synthesis of materials: Gas phase chemistry in command', Phosphorus, Sulfur and Silicon and the Related Elements, vol. 179, no. 4-5, pp. 707-710. https://doi.org/10.1080/10426500490426647

APA

Timoshkin, A. Y. (2004). Inorganic rings and clusters as single-source precursors toward stoichiometry controlled synthesis of materials: Gas phase chemistry in command. Phosphorus, Sulfur and Silicon and the Related Elements, 179(4-5), 707-710. https://doi.org/10.1080/10426500490426647

Vancouver

Timoshkin AY. Inorganic rings and clusters as single-source precursors toward stoichiometry controlled synthesis of materials: Gas phase chemistry in command. Phosphorus, Sulfur and Silicon and the Related Elements. 2004 Apr;179(4-5):707-710. https://doi.org/10.1080/10426500490426647

Author

Timoshkin, A. Y. / Inorganic rings and clusters as single-source precursors toward stoichiometry controlled synthesis of materials : Gas phase chemistry in command. In: Phosphorus, Sulfur and Silicon and the Related Elements. 2004 ; Vol. 179, No. 4-5. pp. 707-710.

BibTeX

@article{79c279ad452f4cc9a6611ba8ba5eedaa,
title = "Inorganic rings and clusters as single-source precursors toward stoichiometry controlled synthesis of materials: Gas phase chemistry in command",
abstract = "Potential of the inorganic rings and clusters as single-source precursors to 13-15 binary materials and composites is examined employing quantum-chemical methods. Importance of the gas phase association reactions during MOCVD processes from organometallic and hydride precursors is emphasized. Generation of the gas phase [HMYH]n clusters (M=Al,Ga,In; Y=N,P,As) with large oligomerization degree (n ≥ 30) is thermodynamically favorable even at high temperature conditions (1000 K) for all M, Y pairs. High stability of the N-containing clusters makes mixed metal oligomer imidometallanes excellent single-source precursors for the stoichiometry-controlled MOCVD of 13-15 composites.",
keywords = "Gas phase thermochemistry, Inorganic rings and clusters, Single-source precursors, Theoretical study",
author = "Timoshkin, {A. Y.}",
year = "2004",
month = apr,
doi = "10.1080/10426500490426647",
language = "English",
volume = "179",
pages = "707--710",
journal = "Phosphorus, Sulfur and Silicon and the Related Elements",
issn = "1042-6507",
publisher = "Taylor & Francis",
number = "4-5",

}

RIS

TY - JOUR

T1 - Inorganic rings and clusters as single-source precursors toward stoichiometry controlled synthesis of materials

T2 - Gas phase chemistry in command

AU - Timoshkin, A. Y.

PY - 2004/4

Y1 - 2004/4

N2 - Potential of the inorganic rings and clusters as single-source precursors to 13-15 binary materials and composites is examined employing quantum-chemical methods. Importance of the gas phase association reactions during MOCVD processes from organometallic and hydride precursors is emphasized. Generation of the gas phase [HMYH]n clusters (M=Al,Ga,In; Y=N,P,As) with large oligomerization degree (n ≥ 30) is thermodynamically favorable even at high temperature conditions (1000 K) for all M, Y pairs. High stability of the N-containing clusters makes mixed metal oligomer imidometallanes excellent single-source precursors for the stoichiometry-controlled MOCVD of 13-15 composites.

AB - Potential of the inorganic rings and clusters as single-source precursors to 13-15 binary materials and composites is examined employing quantum-chemical methods. Importance of the gas phase association reactions during MOCVD processes from organometallic and hydride precursors is emphasized. Generation of the gas phase [HMYH]n clusters (M=Al,Ga,In; Y=N,P,As) with large oligomerization degree (n ≥ 30) is thermodynamically favorable even at high temperature conditions (1000 K) for all M, Y pairs. High stability of the N-containing clusters makes mixed metal oligomer imidometallanes excellent single-source precursors for the stoichiometry-controlled MOCVD of 13-15 composites.

KW - Gas phase thermochemistry

KW - Inorganic rings and clusters

KW - Single-source precursors

KW - Theoretical study

UR - http://www.scopus.com/inward/record.url?scp=3042515587&partnerID=8YFLogxK

U2 - 10.1080/10426500490426647

DO - 10.1080/10426500490426647

M3 - Article

AN - SCOPUS:3042515587

VL - 179

SP - 707

EP - 710

JO - Phosphorus, Sulfur and Silicon and the Related Elements

JF - Phosphorus, Sulfur and Silicon and the Related Elements

SN - 1042-6507

IS - 4-5

ER -

ID: 17373311