Standard

Injection of spin-polarized current into semiconductor. / Vedyayev, A. V.; Dieny, B.; Ryzhanova, N. V.; Zhukov, I. V.; Zhuravlev, M. Ye; Lutz, H. O.

In: Journal of Magnetism and Magnetic Materials, Vol. 258-259, 01.03.2003, p. 77-79.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Vedyayev, AV, Dieny, B, Ryzhanova, NV, Zhukov, IV, Zhuravlev, MY & Lutz, HO 2003, 'Injection of spin-polarized current into semiconductor', Journal of Magnetism and Magnetic Materials, vol. 258-259, pp. 77-79. https://doi.org/10.1016/S0304-8853(02)01113-7

APA

Vedyayev, A. V., Dieny, B., Ryzhanova, N. V., Zhukov, I. V., Zhuravlev, M. Y., & Lutz, H. O. (2003). Injection of spin-polarized current into semiconductor. Journal of Magnetism and Magnetic Materials, 258-259, 77-79. https://doi.org/10.1016/S0304-8853(02)01113-7

Vancouver

Vedyayev AV, Dieny B, Ryzhanova NV, Zhukov IV, Zhuravlev MY, Lutz HO. Injection of spin-polarized current into semiconductor. Journal of Magnetism and Magnetic Materials. 2003 Mar 1;258-259:77-79. https://doi.org/10.1016/S0304-8853(02)01113-7

Author

Vedyayev, A. V. ; Dieny, B. ; Ryzhanova, N. V. ; Zhukov, I. V. ; Zhuravlev, M. Ye ; Lutz, H. O. / Injection of spin-polarized current into semiconductor. In: Journal of Magnetism and Magnetic Materials. 2003 ; Vol. 258-259. pp. 77-79.

BibTeX

@article{d880ef2a082f4d55814fbe7d2dd1e21a,
title = "Injection of spin-polarized current into semiconductor",
abstract = "A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated.",
keywords = "Current injection into semiconductor, Linear response formalism, Schottky barrier, Spin-polarized transport",
author = "Vedyayev, {A. V.} and B. Dieny and Ryzhanova, {N. V.} and Zhukov, {I. V.} and Zhuravlev, {M. Ye} and Lutz, {H. O.}",
year = "2003",
month = mar,
day = "1",
doi = "10.1016/S0304-8853(02)01113-7",
language = "English",
volume = "258-259",
pages = "77--79",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",
note = "Second Moscow International Symposium on Magnetism (MISM) ; Conference date: 20-06-2001 Through 24-06-2001",

}

RIS

TY - JOUR

T1 - Injection of spin-polarized current into semiconductor

AU - Vedyayev, A. V.

AU - Dieny, B.

AU - Ryzhanova, N. V.

AU - Zhukov, I. V.

AU - Zhuravlev, M. Ye

AU - Lutz, H. O.

PY - 2003/3/1

Y1 - 2003/3/1

N2 - A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated.

AB - A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated.

KW - Current injection into semiconductor

KW - Linear response formalism

KW - Schottky barrier

KW - Spin-polarized transport

UR - http://www.scopus.com/inward/record.url?scp=0037337668&partnerID=8YFLogxK

U2 - 10.1016/S0304-8853(02)01113-7

DO - 10.1016/S0304-8853(02)01113-7

M3 - Conference article

AN - SCOPUS:0037337668

VL - 258-259

SP - 77

EP - 79

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

T2 - Second Moscow International Symposium on Magnetism (MISM)

Y2 - 20 June 2001 through 24 June 2001

ER -

ID: 51233544