Influence of Nanosized Semiconducting Additives on the Ingition of Energy-Storage Materials Subjected to a High-Intensity Electron Beam

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research

Original language	English
Title of host publication	Proceedings of IVESC-ICEE-2014, Saint-Petersburg, Russia, June 30 – July 04, 2014
Pages	184-185
DOIs	https://doi.org/10.1109/IVESC.2014.6892039
State	Published - 2014

ID: 7020818