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Indirect evidence of the high antimony concentration during the growth in the shape of GaSb nanowires. / Сибирёв, Николай Владимирович; Штром, Игорь Викторович.

In: IEEE Xplore Digital Library, 2024.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Сибирёв, НВ & Штром, ИВ 2024, 'Indirect evidence of the high antimony concentration during the growth in the shape of GaSb nanowires', IEEE Xplore Digital Library.

APA

Сибирёв, Н. В., & Штром, И. В. (2024). Indirect evidence of the high antimony concentration during the growth in the shape of GaSb nanowires. IEEE Xplore Digital Library.

Vancouver

Сибирёв НВ, Штром ИВ. Indirect evidence of the high antimony concentration during the growth in the shape of GaSb nanowires. IEEE Xplore Digital Library. 2024.

Author

Сибирёв, Николай Владимирович ; Штром, Игорь Викторович. / Indirect evidence of the high antimony concentration during the growth in the shape of GaSb nanowires. In: IEEE Xplore Digital Library. 2024.

BibTeX

@article{b694943565ef44368d5063fd0a3d35c5,
title = "Indirect evidence of the high antimony concentration during the growth in the shape of GaSb nanowires",
author = "Сибирёв, {Николай Владимирович} and Штром, {Игорь Викторович}",
year = "2024",
language = "русский",
journal = "IEEE Xplore Digital Library",
issn = "2473-2001",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

RIS

TY - JOUR

T1 - Indirect evidence of the high antimony concentration during the growth in the shape of GaSb nanowires

AU - Сибирёв, Николай Владимирович

AU - Штром, Игорь Викторович

PY - 2024

Y1 - 2024

M3 - статья в журнале по материалам конференции

JO - IEEE Xplore Digital Library

JF - IEEE Xplore Digital Library

SN - 2473-2001

ER -

ID: 121683894