In Situ Monitoring of MBE Growth of a Single Self-Catalyzed GaAs Nanowire by X-ray Diffraction

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In Situ Monitoring of MBE Growth of a Single Self-Catalyzed GaAs Nanowire by X-ray Diffraction. / Mostafavi Kashani, Seyed Mohammad; Dubrovskii, Vladimir G.; Baumbach, Tilo; Pietsch, Ullrich.

In: Journal of Physical Chemistry C, Vol. 125, No. 41, 11.10.2021, p. 22724-22732.

Research output: Contribution to journal › Article › peer-review

Author

Mostafavi Kashani, Seyed Mohammad ; Dubrovskii, Vladimir G. ; Baumbach, Tilo ; Pietsch, Ullrich. / In Situ Monitoring of MBE Growth of a Single Self-Catalyzed GaAs Nanowire by X-ray Diffraction. In: Journal of Physical Chemistry C. 2021 ; Vol. 125, No. 41. pp. 22724-22732.

BibTeX

@article{89c5c919388840ffb7085c9bc2f24da0,

title = "In Situ Monitoring of MBE Growth of a Single Self-Catalyzed GaAs Nanowire by X-ray Diffraction",

abstract = "Self-catalyzed GaAs nanowires (NWs) on Si substrates are one of the superior candidates for future electronics and optoelectronics integrated with a silicon electronic platform. To bring the NWs from laboratories to industry, it is essential to further develop their basic science and engineering. In situ growth monitoring plays an important role in understanding the fundamental growth mechanisms influencing the resulting properties of NWs. We report on monitoring the growth of an individual self-catalyzed GaAs NW on a patterned Si substrate by molecular beam epitaxy utilizing a micro X-ray diffraction (XRD) setup. For the first time, the full growth run of a single NW was monitored by XRD over a time span of about 1 h. It was found that the NW growth follows two stages. In the first stage, the NW axial growth is dominant while the NW oscillates within 1° tilt angle with respect to the substrate normal. In the second stage, the NW starts to grow radially maintaining a stable orientation. These findings are explained within a dedicated model. From a technical point of view, our results demonstrate the feasibility of in situ growth experiments with NWs/nanoparticles using synchrotron radiation. ",

keywords = "MOLECULAR-BEAM-EPITAXY, LIQUID-SOLID GROWTH, SURFACE-DIFFUSION, SILICON, ORIENTATION, DYNAMICS, ADATOMS, LENGTH",

author = "{Mostafavi Kashani}, {Seyed Mohammad} and Dubrovskii, {Vladimir G.} and Tilo Baumbach and Ullrich Pietsch",

note = "Publisher Copyright: {\textcopyright} ",

year = "2021",

month = oct,

day = "11",

doi = "10.1021/acs.jpcc.1c04255",

language = "English",

volume = "125",

pages = "22724--22732",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "41",

}

RIS

TY - JOUR

T1 - In Situ Monitoring of MBE Growth of a Single Self-Catalyzed GaAs Nanowire by X-ray Diffraction

AU - Mostafavi Kashani, Seyed Mohammad

AU - Dubrovskii, Vladimir G.

AU - Baumbach, Tilo

AU - Pietsch, Ullrich

N1 - Publisher Copyright: ©

PY - 2021/10/11

Y1 - 2021/10/11

N2 - Self-catalyzed GaAs nanowires (NWs) on Si substrates are one of the superior candidates for future electronics and optoelectronics integrated with a silicon electronic platform. To bring the NWs from laboratories to industry, it is essential to further develop their basic science and engineering. In situ growth monitoring plays an important role in understanding the fundamental growth mechanisms influencing the resulting properties of NWs. We report on monitoring the growth of an individual self-catalyzed GaAs NW on a patterned Si substrate by molecular beam epitaxy utilizing a micro X-ray diffraction (XRD) setup. For the first time, the full growth run of a single NW was monitored by XRD over a time span of about 1 h. It was found that the NW growth follows two stages. In the first stage, the NW axial growth is dominant while the NW oscillates within 1° tilt angle with respect to the substrate normal. In the second stage, the NW starts to grow radially maintaining a stable orientation. These findings are explained within a dedicated model. From a technical point of view, our results demonstrate the feasibility of in situ growth experiments with NWs/nanoparticles using synchrotron radiation.

AB - Self-catalyzed GaAs nanowires (NWs) on Si substrates are one of the superior candidates for future electronics and optoelectronics integrated with a silicon electronic platform. To bring the NWs from laboratories to industry, it is essential to further develop their basic science and engineering. In situ growth monitoring plays an important role in understanding the fundamental growth mechanisms influencing the resulting properties of NWs. We report on monitoring the growth of an individual self-catalyzed GaAs NW on a patterned Si substrate by molecular beam epitaxy utilizing a micro X-ray diffraction (XRD) setup. For the first time, the full growth run of a single NW was monitored by XRD over a time span of about 1 h. It was found that the NW growth follows two stages. In the first stage, the NW axial growth is dominant while the NW oscillates within 1° tilt angle with respect to the substrate normal. In the second stage, the NW starts to grow radially maintaining a stable orientation. These findings are explained within a dedicated model. From a technical point of view, our results demonstrate the feasibility of in situ growth experiments with NWs/nanoparticles using synchrotron radiation.

KW - MOLECULAR-BEAM-EPITAXY

KW - LIQUID-SOLID GROWTH

KW - SURFACE-DIFFUSION

KW - SILICON

KW - ORIENTATION

KW - DYNAMICS

KW - ADATOMS

KW - LENGTH

UR - http://www.scopus.com/inward/record.url?scp=85114742755&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.1c04255

DO - 10.1021/acs.jpcc.1c04255

M3 - Article

AN - SCOPUS:85114742755

VL - 125

SP - 22724

EP - 22732

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 41

ER -

ID: 88748166