Research output: Contribution to journal › Article › peer-review
Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy. / Chereau, Emmanuel; Dubrovskii, Vladimir G. ; Gregoire, Gabin; Avit, Geoffrey; Staudinger, Philipp; Shmid, Heinz; Bougerol, Catherine; Coulon, Pierre-Marie; Shields, Philip; Trassoudaine, Agnes; Gil, Evelyne; LaPierre, Ray R.; Andre, Yamina.
In: Crystal Growth and Design, Vol. 23, No. 6, 22.05.2023, p. 4401-4409.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy
AU - Chereau, Emmanuel
AU - Dubrovskii, Vladimir G.
AU - Gregoire, Gabin
AU - Avit, Geoffrey
AU - Staudinger, Philipp
AU - Shmid, Heinz
AU - Bougerol, Catherine
AU - Coulon, Pierre-Marie
AU - Shields, Philip
AU - Trassoudaine, Agnes
AU - Gil, Evelyne
AU - LaPierre, Ray R.
AU - Andre, Yamina
PY - 2023/5/22
Y1 - 2023/5/22
N2 - We report on the selective area growth (SAG) of GaAs nanowires (NWs) by the catalyst-free vapor-solid mechanism. Well-ordered GaAs NWs were grown on GaAs(111)B substrates patterned with a dielectric mask using hydride vapor phase epitaxy (HVPE). GaAs NWs were grown along the ⟨111⟩B direction with perfect hexagonal shape when the hole’s opening diameter in SiNx or SiOx mask was varied from 80 to 340 nm. The impact of growth conditions and the hole size on the NW lengths and growth rates was investigated. A saturation of the NW lengths was observed at high partial pressures of As4, explained by the presence of As trimers on the (111)B surface at the NW top surface. By decreasing As4 partial pressure and decreasing the hole size, high aspect ratio NWs were obtained. The longest and thinnest NWs grew faster than a two-dimensional layer under the same conditions, which strongly suggests that surface diffusion of Ga adatoms from the NW sidewalls to their top contributes to the resulting axial growth rate. These findings were supported by a dedicated model. The study highlights the capability of the HVPE process to grow high aspect ratio GaAs NW arrays with high selectivity.
AB - We report on the selective area growth (SAG) of GaAs nanowires (NWs) by the catalyst-free vapor-solid mechanism. Well-ordered GaAs NWs were grown on GaAs(111)B substrates patterned with a dielectric mask using hydride vapor phase epitaxy (HVPE). GaAs NWs were grown along the ⟨111⟩B direction with perfect hexagonal shape when the hole’s opening diameter in SiNx or SiOx mask was varied from 80 to 340 nm. The impact of growth conditions and the hole size on the NW lengths and growth rates was investigated. A saturation of the NW lengths was observed at high partial pressures of As4, explained by the presence of As trimers on the (111)B surface at the NW top surface. By decreasing As4 partial pressure and decreasing the hole size, high aspect ratio NWs were obtained. The longest and thinnest NWs grew faster than a two-dimensional layer under the same conditions, which strongly suggests that surface diffusion of Ga adatoms from the NW sidewalls to their top contributes to the resulting axial growth rate. These findings were supported by a dedicated model. The study highlights the capability of the HVPE process to grow high aspect ratio GaAs NW arrays with high selectivity.
UR - https://www.mendeley.com/catalogue/a39ba8d1-9749-343e-9ee5-7737d84757b5/
U2 - 10.1021/acs.cgd.3c00172
DO - 10.1021/acs.cgd.3c00172
M3 - Article
VL - 23
SP - 4401
EP - 4409
JO - Crystal Growth and Design
JF - Crystal Growth and Design
SN - 1528-7483
IS - 6
ER -
ID: 107027988